Product Information

BAS 16-03W E6327

BAS 16-03W E6327 electronic component of Infineon

Datasheet
Diodes - General Purpose, Power, Switching Silicon Switch Diode

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.5713 ( AUD 0.63 Inc GST) ea
Line Total: AUD 0.5713 ( AUD 0.63 Inc GST)

70002 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
69903 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.5538
10 : AUD 0.3892
100 : AUD 0.1893
1000 : AUD 0.1097
3000 : AUD 0.0973
9000 : AUD 0.0778
24000 : AUD 0.0761
45000 : AUD 0.0708
99000 : AUD 0.0655

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

BAS16... Silicon Switching Diode For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS16 BAS16-02L BAS16S BAS16-07L4 BAS16W BAS16-02V BAS16U BAS16-02W BAS16-03W Type Package Configuration Marking BAS16 SOT23 single A6s BAS16-02L* TSLP-2-1 single, leadless A6 BAS16-02V SC79 single 6 BAS16-02W SCD80 single A6 BAS16-03W SOD323 single white B BAS16-07L4* TSLP-4-4 parallel pair, leadless 6A BAS16S SOT363 parallel triple A6s BAS16U SC74 parallel triple A6s BAS16W SOT323 single A6s * Preliminary Data 1 Pb-containing package may be available upon special request 1 2009-09-28BAS16... Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM mA Forward current I F BAS16 250 BAS16-02L, -07L4 200 BAS16-02V, -02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 BAS16W 250 A Non-repetitive peak surge forward current I FSM t = 1 s, BAS16/ S/ U/ W/ -03W 4.5 t = 1 s, BAS16-02L/ -02V/ -02W/ -07L4 2.5 t = 1 s 0.5 Total power dissipation P mW tot BAS16, T 54 C 370 S BAS16-02L, -07L4, T 130 C 250 S BAS16-02V, -02W, T 120 C 250 S BAS16-03W, T 116 C 250 S BAS16S, T 85 C 250 S BAS16U, T 113 C 250 S BAS16W, T 119 C 250 S 150 C Junction temperature T j Storage temperature T -65 ...150 stg 2 2009-09-28

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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