The BAR 90-02ELS E6327 is a SiC MOSFET manufactured by Infineon. It is a 1200V, 75A device with a maximum on-state resistance (RDSon) of just 0.74mohm. It has an integral Schottky diode for freewheeling and is suitable for applications such as DC/DC converters and inverters. Its new-generation trench technology ensures a low switching loss and latency. This MOSFET is intended for use in industrial power supplies, renewable energy systems and voltage transformers.