Product Information

BAR 90-02ELS E6327

BAR 90-02ELS E6327 electronic component of Infineon

Datasheet
PIN Diodes RF DIODES
N-channel enhanced MOSFET with low RDSon, optimized for automotive applications.

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.6723 ( AUD 0.74 Inc GST) ea
Line Total: AUD 0.6723 ( AUD 0.74 Inc GST)

23 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12319 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1112
Multiples : 1
1112 : AUD 0.1731

23 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.6723
10 : AUD 0.4724
100 : AUD 0.2388
1000 : AUD 0.1486
2500 : AUD 0.1292
10000 : AUD 0.1097
15000 : AUD 0.1044
45000 : AUD 0.0955
90000 : AUD 0.0938

14550 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 685
Multiples : 1
685 : AUD 0.3888
1000 : AUD 0.3624
2500 : AUD 0.3518
5000 : AUD 0.3424
10000 : AUD 0.334

     
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The BAR 90-02ELS E6327 is a SiC MOSFET manufactured by Infineon. It is a 1200V, 75A device with a maximum on-state resistance (RDSon) of just 0.74mohm. It has an integral Schottky diode for freewheeling and is suitable for applications such as DC/DC converters and inverters. Its new-generation trench technology ensures a low switching loss and latency. This MOSFET is intended for use in industrial power supplies, renewable energy systems and voltage transformers.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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