BAR89 Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 0.8 I = 10mA) F Very low signal distortion Pb-free (RoHS compliant) package BAR89-02LRH 1 2 Type Package Configuration L (nH) Marking S BAR89-02LRH TSLP-2-7 single, leadless 0.4 R Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 100 mA Forward current I F 250 mW Total power dissipation P tot T 133C s 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 65 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2012-08-08 1BAR89 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 80 - - V Breakdown voltage V (BR) I = 5 A (BR) - - 50 Reverse current I nA R V = 60 V R V Forward voltage V F I = 10 mA - 0.83 0.9 F I = 100 mA - 0.95 1.1 F 2012-08-08 2