The BAR6306E6327HTSA1 is an OptiMOS Power MOSFET transistor manufactured by Infineon Technologies. It is designed to meet the requirements of high performance power management applications. Features include ultra low on-resistance, low gate charge, and very low RDS(on). It is also capable of handling large current capabilities with a total power dissipation of up to 75W. This transistor is a dual N-channel NVMOSFET with a package size of DPAK and very low gate threshold voltage levels for broad signal-level compatibility. The BAR6306E6327HTSA1 is suitable for applications such as DC DC converters, power supplies, and motor drives.