Product Information

BAR 63-05W H6327

Hot BAR 63-05W H6327 electronic component of Infineon

Datasheet
PIN Diodes RF DIODES
High-voltage MOSFET transistor with 800 V breakdown voltage and 20 A maximum drain current.

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

2000: AUD 0.0962 ( AUD 0.11 Inc GST) ea
Line Total: AUD 192.4 ( AUD 211.64 Inc GST)

2626 - Global Stock
Ships to you between
Mon. 29 Jul to Thu. 01 Aug
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
2626 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 2000
Multiples : 1
2000 : AUD 0.0962

6326 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.7183
10 : AUD 0.4494
100 : AUD 0.1982
1000 : AUD 0.1557
3000 : AUD 0.1097
9000 : AUD 0.0973

     
Manufacturer
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RoHS - XON
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Maximum Diode Capacitance
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
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Technologies The BAR 63-05W H6327 part of Infineon Technologies is an N-channel MOSFET transistor, which is designed to perform high-frequency switching in a variety of applications. It features an ultra-low on-state resistance, making it suitable for use in power stages and can handle up to 450V drain-to-source voltages. It also has high-frequency switching performance, and a long life, low thermal resistance, and maximum performance despite varying temperatures and power levels.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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