Product Information

GRF2171

GRF2171 electronic component of Guerrilla RF

Datasheet
RF Amplifier Ultra High Gain Ultra LNA; 2.5 - 5.0 GHz

Manufacturer: Guerrilla RF
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 6.6508 ( AUD 7.32 Inc GST) ea
Line Total: AUD 6.6508 ( AUD 7.32 Inc GST)

6094 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2994 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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GRF2171
Guerrilla RF

1 : AUD 6.6346
10 : AUD 6.3162
100 : AUD 5.8208
250 : AUD 5.1662
500 : AUD 4.6354
1000 : AUD 2.8308
2500 : AUD 2.5654
5000 : AUD 2.4238
10000 : AUD 2.4062

     
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Notes:- Show Stocked Products With Similar Attributes.

GRF2171 Released High Gain Ultra LNA Tuning Range: 2.5 to 5.0 GHz Product Description GRF2171 is an ultra-high gain, ultra-low noise amplifier that can be tuned over a wide range of frequencies. Flexible biasing allows the device to be configured for a wide range of Vdd and Iddq values for optimal efficiency and linearity. Features Consult with the GRF applications engineering team for custom tuning/evaluation board data. Reference: 5V/75mA/3.6 GHz EVB NF: 0.80 dB Gain: 26.8 dB OP1dB: 18.7 dBm OIP3: 35.0 dBm Flexible Bias Voltage and Current Process: GaAs pHEMT Applications Ultra High Gain LNA 1.5 x 1.5 mm DFN-6 CBRS Microwave Backhaul TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 02/10/21 1 GRF2171 Released High Gain Ultra LNA Tuning Range: 2.5 to 5.0 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Supply Voltage VDD 0 6.0 V RF Input Power CW : (Load VSWR < 2:1 V : 5.0 P 22 dBm D IN MAX volts) Operating Temperature (Package Heat Sink) T -40 105 C AMB Maximum Channel Temperature TMAX 170 C (MTTF > 10 6 Hours) Maximum Dissipated Power P 600 mW DISS MAX Electrostatic Discharge: Charged Device Model: CDM 1000 V Human Body Model: HBM 250 V Storage: Storage Temperature T -65 150 C STG Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF2171 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 02/10/21 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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