LM10 www.ti.com SNOSBH4D MAY 1998REVISED MARCH 2013 LM10 Operational Amplifier and Voltage Reference Check for Samples: LM10 1FEATURES DESCRIPTION The LM10 series are monolithic linear ICs consisting 2 Input Offset Voltage: 2 mV (max) of a precision reference, an adjustable reference Input Offset Current: 0.7 nA (max) buffer and an independent, high quality op amp. Input Bias Current: 20 nA (max) The unit can operate from a total supply voltage as Reference Regulation: 0.1% (max) low as 1.1V or as high as 40V, drawing only 270A. Offset Voltage Drift: 2 V/C A complementary output stage swings within 15 mV of the supply terminals or will deliver 20 mA output Reference Drift: 0.002%/C current with 0.4V saturation. Reference output can be as low as 200 mV. The circuit is recommended for portable equipment and is completely specified for operation from a single power cell. In contrast, high output-drive capability, both voltage and current, along with thermal overload protection, suggest it in demanding general-purpose applications. The device is capable of operating in a floating mode, independent of fixed supplies. It can function as a remote comparator, signal conditioner, SCR controller or transmitter for analog signals, delivering the processed signal on the same line used to supply power. It is also suited for operation in a wide range of voltage- and current-regulator applications, from low voltages to several hundred volts, providing greater precision than existing ICs. This series is available in the three standard temperature ranges, with the commercial part having relaxed limits. In addition, a low-voltage specification (suffix L) is available in the limited temperature ranges at a cost savings. Connection and Functional Diagrams Figure 1. TO Package (NEV) Figure 2. SOIC Package (NPA) See Package Number NEV0008A See Package Number NPA0014B 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright 19982013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.LM10 SNOSBH4D MAY 1998REVISED MARCH 2013 www.ti.com Figure 3. PDIP Package (P) Figure 4. See Package Number P (R-PDIP-T8) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. (1)(2)(3) Absolute Maximum Ratings LM10/LM10B/ LM10BL/ LM10C LM10CL Total Supply Voltage 45V 7V (4) Differential Input Voltage 40V 7V (5) Power Dissipation internally limited (6) Output Short-circuit Duration continuous Storage-Temp. Range 55C to +150C Lead Temp. (Soldering, 10 seconds) TO 300C Lead Temp. (Soldering, 10 seconds) DIP 260C Vapor Phase (60 seconds) 215C Infrared (15 seconds) 220C ESD rating is to be determined. Maximum Junction Temperature LM10 150C LM10B 100C LM10C 85C (1) Refer to RETS10X for LM10H military specifications. (2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. (3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. (4) The Input voltage can exceed the supply voltages provided that the voltage from the input to any other terminal does not exceed the maximum differential input voltage and excess dissipation is accounted for when V <V . IN (5) The maximum, operating-junction temperature is 150C for the LM10, 100C for the LM10B(L) and 85C for the LM10C(L). At elevated temperatures, devices must be derated based on package thermal resistance. (6) Internal thermal limiting prevents excessive heating that could result in sudden failure, but the IC can be subjected to accelerated stress with a shorted output and worst-case conditions. 2 Submit Documentation Feedback Copyright 19982013, Texas Instruments Incorporated Product Folder Links: LM10