OST-9L2 PHOTO TRANSISTOR General Description The OST-9L2 is high sensitivity NPN silicon photo-transistor mounted in a clear plastic package. With lensed package, this small phototransistor permits narrow angular response. Features Compact Narrow angular response Low cost Meet RoHS Applications Optical counters Optical detectors Camera stroboscopes MAXIMUM RATINGS (Ta=25) Item Symbol Rating Unit Power dissipation Pd 100 mW Operating temperature. Topr -25 ~ +75 Storage temperature. Tstg -25 ~ +100 Soldering temperature. *1 Tsol 260 * 1 For MAX. 5 secends at the position of 5mm from the package ELECTRO-OPTICAL CHARACTERISTICS (Ta=25) Item Symbol Condition Min Typ Max Unit C-E breakdown voltage BVCEO IC=100uA 30 100 V E-C breakdown voltage BVECO IE=100uA 6.5 V Collector dark current ICEO VCE=20V 100 nA VCE=10V , p=940nm Light current IL mA 4.0 7.0 2 Ee=0.5mW/cm C-E saturatuon voltage VCE(sat) IC=2mA , IB=100uA 0.2 V 2 Radiant sensitivity area A 0.186 mm Peak sensitive wavelength p 850 nm tr 15 usec Rise time VCC=5V , IC=1mA Switching speeds Fall time tf RL=1000 15 usec Current gain h FE VCE=5V , IC=2mA 1600 Half angle 10 deg. December 2005 Rev 1.0OST-9L2 PHOTO TRANSISTOR (nm) December 2005 Rev 1.0