EDG103S is a P-Channel enhancement-mode metal–oxide–semiconductor field-effect transistor (MOSFET) designed specifically for portable and mobile applications requiring low HF noise, low ON-state resistance, and small packaging. It consists of three terminals (source, gate, and drain), which allow the user to control the flow of electrons. The gate terminal is electrically insulated from the source and drain, allowing the user to control current without any direct electrical contact. The EDG103S is often found in cell phones and other portable electronic devices, and is capable of switching currents up to 2.5A.