Product Information

MR4A16BUYS45

MR4A16BUYS45 electronic component of Everspin

Datasheet
MRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM

Manufacturer: Everspin
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 92.6024 ( AUD 101.86 Inc GST) ea
Line Total: AUD 92.6024 ( AUD 101.86 Inc GST)

147 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
147 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

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MR4A16BUYS45
Everspin

1 : AUD 89.7531
10 : AUD 83.2423
25 : AUD 79.5446
50 : AUD 79.1377
108 : AUD 71.4769
540 : AUD 71.4769
1080 : AUD 71.4769
2592 : AUD 71.4769

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Interface Type
Memory Size
Organisation
Data Bus Width
Access Time
Supply Voltage - Min
Supply Voltage - Max
Operating Supply Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Mounting Style
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

MR4A16B 1M x 16 MRAM FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20 years at temperature RoHS-compliant small footprint BGA and TSOP2 package All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A16B is a 16,777,216-bit magnetoresistive random access memory RoHS (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro- tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products. The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C), and industrial temperature (-40 to +85 C) operating temperature options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 3 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.............................................................................................. 16 Copyright 2018 Everspin Technologies, Inc. 1 MR4A16B Rev. 11.7 3/2018MR4A16B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT UPPER BYTE OUTPUT ENABLE G ENABLE BUFFER LOWER BYTE OUTPUT ENABLE 10 UPPER A 19:0 ADDRESS 8 BYTE 10 ROW BUFFER COLUMN 20 OUTPUT DECODER 8 DECODER BUFFER SENSE CHIP E LOWER AMPS 8 16 ENABLE BYTE 8 OUTPUT BUFFER 1M x 16 BUFFER BIT UPPER MEMORY 8 BYTE WRITE DQU 15:8 W 8 ARRAY WRITE ENABLE DRIVER FINAL BUFFER 16 WRITE 8 LOWER DRIVERS 8 BYTE DQL 7:0 WRITE UB DRIVER UB UPPER BYTE WRITE ENABLE BYTE ENABLE LB LB BUFFER LOWER BYTE WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable UB Upper Byte Enable LB Lower Byte Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies, Inc. 2 MR4A16B Rev. 11.7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Everspin Tech
Everspin Technologies

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