GBU4A thru GBU4G V = 50 V - 1000 V RRM Silicon Bridge I =4 A F Rectifier Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Types up to 1000 V V RRM Ideal for printed circuit board GBU Package High surge overload rating High temperature soldering guaranteed: 260 C/ 10 seconds, 0.375(9.5mm) lead length Glass passivated chip junction High case dielectric strength 1500 V RMS Mechanical Data Case: Molded plastic body over passivated junctions Mounting position: Any Terminals: Plated leads, solderable per MIL-STD-750 Method 2026 guaranteed Maximum ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Conditions GBU4A GBU4B GBU4D GBU4G Unit Repetitive peak reverse voltage V 50 100 200 400 V RRM V 140 280 RMS reverse voltage 35 70 V RMS DC blocking voltage V 50 100 200 400 V DC I T 100 C 44 Continuous forward current 44 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 150 150 150 150 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions GBU4D GBU4G Parameter Symbol GBU4A GBU4B Unit V = 4 A, T = 25 C Diode forward voltage I 1.1 1.1 1.1 1.1 V F F j V = 50 V, T = 25 C 55 R j 55 I Reverse current A R V = 50 V, T = 125 C 500 500 500 500 R j Thermal characteristics R 22.0 22.0 22.0 22.0 Thermal resistance, junction - thJA C/W case R 4.2 4.2 4.2 4.2 thJL www.genesicsemi.com 1GBU4A thru GBU4G www.genesicsemi.com 2