ZXTN04120HFF 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN SOT23F Features Mechanical Data BV > 120V Case: SOT23F CEO I = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C V < 1.5V 1A UL Flammability Classification Rating 94V-0 CE(SAT) R = 38m Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) 1.5W Power Dissipation Terminals: Finish Matte Tin Plated Leads, Solderable per Complementary PNP Type: ZXTP05120FF MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.012 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This high performance NPN Darlington transistor is housed in the Lamp, Relay and Solenoid Drive small outline SOT23 flat package for applications where space is at a Lighting premium. SOT23F E C B Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN04120HFFTA AEC-Q101 1F6 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN04120HFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 140 V CBO Collector-Emitter Voltage 120 V V CEO Emitter-Base Voltage 10 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current 4 A I CM Base Current 0.5 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Lead R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge Machine Model ESD MM 200 V B Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN04120HFF April 2016 Diodes Incorporated www.diodes.com Document number: DS33669 Rev. 2 - 2