A Product Line of Diodes Incorporated ZXGD3005E6 25V 10A GATE DRIVER IN SOT26 Description and Applications Features and Benefits The ZXGD3005E6 is a high-speed non-inverting single gate driver Emitter-follower configuration for ultra-fast switching capable of driving up to 10A into a MOSFET or IGBT gate capacitive <10ns propagation delay time load from supply voltages up to 25V. With propagation delay times <20ns rise/fall time down to <10ns and correspondingly rise/fall times of <20ns. Non-inverting voltage buffer stage Wide supply voltage up to 25V to minimize on-losses This gate driver ensures rapid switching of the MOSFET or IGBT to 10A peak current drive into capacitive loads minimize power losses and distortion in high current switching Low input current of 1mA to deliver 4A output current applications. It is ideally suited to act as a voltage buffer between the Separate source and sink outputs for independent control of rise typically high output impedances of a controller IC and the effectively and fall time low impedance on the gate of a power MOSFET or IGBT during Optimized pin-out to ease board layout and minimize parasitic switching. Its low input voltage requirement and high current gain inductance of traces allows high current driving from low voltage controller ICs. Rugged design that avoids latch-up or shoot-through issues Near - Zero quiescent supply current The ZXGD3005E6 has separate source and sink outputs that enables Lead-Free, RoHS Compliant (Note 1) the turn-on and turn-off times of the MOSFET or IGBT to be Green Devices (Note 2) independently controlled. In addition, the wide supply voltage range Qualified to AEC-Q101 Standards for High Reliability allows full enhancement of the MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltage to prevent dV/dt induced false triggering of IGBTs. The ZXGD3005E6 has been designed to be inherently rugged to latch-up and shoot-through issues. The optimized pin-out SOT26 package eases board layout, Mechanical Data enabling reduced parasitic inductance of traces. Case: SOT26 Power MOSFET and IGBT Gate Driving in: Case material: Molded Plastic. Green Molding Compound. Synchronous switch-mode power supplies UL Flammability Rating 94V-0 Power Factor Correction (PFC) in power supplies Moisture Sensitivity: Level 1 per J-STD-020 Secondary side synchronous rectification Terminals: Matte Tin Finish Plasma Display Panel power modules Weight: 0.018 grams (approximate) 1, 2 and 3-phase motor control circuits Audio switching amplifier power output stages Solar inverters Pin Name Pin Function SOT26 V Source CC V Supply voltage high CC IN Driver input pin IN Do Not Connect 1 V Supply voltage low EE V Sink EE SOURCE Source current output SINK Sink current output Top View Top View Pin-Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXGD3005E6TA 3005 7 8 3000 Notes: 1. No purposefully added lead 2. Green devices, Halogen and Antimony Free, Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXGD3005E6 Typical Application Circuit V S V CC V CC R SOURCE SOURCE IN ZXGD3005 SINK R SINK V EE Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply voltage, with respect to V V 25 V EE CC Input voltage, with respect to V V 25 V EE IN Output difference voltage (Source Sink) V 7.5 V (source-sink) Peak output current I 10 A PK Input current I 100 mA IN Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit W Power Dissipation (Notes 4 & 5) 1.1 P D Linear derating factor 8.8 mW/C Thermal Resistance, Junction to Ambient (Notes 4 & 5) R 113 JA C/W Thermal Resistance, Junction to Lead (Note 6) R 105 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (V ) and pin 3 (V ) connected separately to each half. CC EE 5. For device with two active die running at equal power. 6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V ) and pin 3 (V ). CC EE 2 of 8 March 2011 ZXGD3005E6 Diodes Incorporated www.diodes.com Document Number DS35095 Rev. 4 2 ADVANCE INFORMATION Controller IC