MMBTA28 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction SOT-23 A Ideal for Low Power Amplification and Switching Dim Min Max High Current Gain C A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant B CGree Device (Notes 3 and 4) B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D D 0.89 1.03 Mechanical Data E G E 0.45 0.60 Case: SOT-23 H Case Material: Molded Plastic. UL Flammability G 1.78 2.05 K M Classification Rating 94V-0 H 2.80 3.00 Moisture Sensitivity: Level 1 per J-STD-020D J L J 0.013 0.10 Terminal Connections: See Diagram K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy C L 0.45 0.61 42 leadframe). M 0.085 0.180 Marking Information: See Page 3 0 8 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) All Dimensions in mm B E Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 80 V V CEO Emitter-Base Voltage V 12 V EBO Collector Current - Continuous I 500 mA C Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) 417 C/W R JA Operating and Storage and Temperature Range -55 to +150 C T , T J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V 80 V I = 100A I = 0 (BR)CBO C E Emitter-Base Breakdown Voltage V 12 V I = 100A I = 0 (BR)EBO E C Collector-Emitter Breakdown Voltage 80 V V I = 100A I = 0 (BR)CEO C B 100 nA I V = 60V, I = 0 CBO CB E Collector Cutoff Current 500 nA I V = 10V CES CE Emitter Cutoff Current I 100 nA V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 2) 10,000 I = 10mA, V = 5.0V C CE DC Current Gain h FE 10,000 I = 100mA, V = 5.0V C CE Collector-Emitter Saturation Voltage V 1.5 V I = 100mA, I = 100A CE(SAT) C B Base-Emitter Saturation Voltage V 2.0 V I = 100mA, V = 5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance 8.0 Typical pF C V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 5.0V, I = 10mA, CE C Current Gain-Bandwidth Product 125 MHz f T f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on our website at 400 1.1 I C 1.0 = 1000 I T = -50C 350 B A 0.9 300 0.8 T = 25C A 0.7 250 0.6 T = 150C 200 A 0.5 150 0.4 0.3 100 0.2 50 0.1 0 0 110 100 1,000 0 25 50 75 100 125 150 175 200 I , COLLECTOR CURRENT (mA) C T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Collector-Emitter Saturation Voltage Fig. 1 Max Power Dissipation vs. vs. Collector Current Ambient Temperature 1.6 1,000,000 V = 5V 1.5 CE V= 5V CE 1.4 T = -50C A 1.3 100,000 1.2 T = 150C A 1.1 T = 25C A T = 25C A 1.0 10,000 0.9 T = -50C A 0.8 0.7 T = 150C A 1,000 0.6 0.5 0.4 0.3 100 110 100 1,000 0.1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 3 Typical Base-Emitter Voltage Fig. 4 Typical DC Current Gain vs. Collector Current vs. Collector Current 1,000 V = 5V CE 100 10 1 110 100 COLLECTOR CURRENT I (mA) C Fig. 5 Typical Gain Bandwidth Product vs. Collector Current DS30367 Rev. 9 - 2 2 of 3 MMBTA28 www.diodes.com Diodes Incorporated f, GAIN BANDWIDTH PRODUCT (MHz) P , POWER DISSIPATION (mW) T V , BASE-EMITTER VOLTAGE (V) D BE(ON) h, DC CURRENT GAIN FE V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V)