The DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Diodes Incorporated. It has a maximum voltage of 600V and offers a rated Gate current of 0.45 KAmps. This part is offered in a TO-247 package type and is suitable for a variety of switching applications. It is able to handle a high current (DC & AC), and provides fast switching speed and high efficiency. It features high temperature tolerance (up to 175°C over ambient) and a wide variety of voltage & wattage ratings for a range of switching applications. This part is RoHS-compliant, making it suitable for many applications in the automotive and industrial markets.