DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW B CGree Device (Notes 2 and 3) A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D Mechanical Data E G D 0.89 1.03 Case: SOT-23 H E 0.45 0.60 Case Material: Molded Plastic. UL Flammability G 1.78 2.05 Classification Rating 94V-0 K M H 2.80 3.00 Moisture Sensitivity: Level 1 per J-STD-020D J J 0.013 0.10 L Terminal Connections: See Diagram K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) M 0.085 0.180 Marking Information: See Table Below & Page 3 0 8 Ordering Information: See Page 3 All Dimensions in mm OUT Weight: 0.008 grams (approximate) 3 P/N R1 (NOM) R2 (NOM) Type Code C DDTB113EC 1K 1K P60 R1 DDTB123EC 2.2K 2.2K P61 B DDTB143EC 4.7K 4.7K P62 R2 DDTB114EC 10K 10K P63 DDTB122JC 0.22K 4.7K P64 DDTB113ZC 1K 10K P65 E DDTB123YC 2.2K 10K P66 1 2 DDTB133HC 3.3K 10K P67 DDTB123TC 2.2K OPEN P69 GND(+) IN DDTB143TC 4.7K OPEN P70 Schematic and Pin Configuration DDTB114TC 10K OPEN P71 DDTB114GC 0 10K P72 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) -50 V V CC Input Voltage, (1) to (2) DDTB113EC +10 to -10 DDTB123EC +10 to -12 DDTB143EC +10 to -30 DDTB114EC +10 to -40 V V IN DDTB122JC +5 to -5 DDTB113ZC +5 to -10 DDTB123YC +5 to -12 DDTB133HC +6 to -20 Input Voltage, (1) to (2) DDTB123TC DDTB143TC V -5 V EBO (MAX) DDTB114TC DDTB114GC Output Current All I -500 mA C Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTB113EC -0.5 DDTB123EC -0.5 DDTB143EC -0.5 DDTB114EC -0.5 V V V = -5V, I = -100A l(off) CC O DDTB122JC -0.5 DDTB113ZC -0.3 DDTB123YC -0.3 DDTB133HC -0.3 Input Voltage V = -0.3V, I = -20mA O O DDTB113EC -3.0 V = -0.3V, I = -20mA O O DDTB123EC -3.0 V = -0.3V, I = -20mA DDTB143EC -3.0 O O V = -0.3V, I = -10mA DDTB114EC -3.0 O O V V l(on) DDTB122JC -3.0 V = -0.3V, I = -30mA O O DDTB113ZC -2.0 V = -0.3V, I = -20mA O O DDTB123YC -2.0 V = -0.3V, I = -20mA O O DDTB133HC -2.0 V = -0.3V, I = -20mA O O Output Voltage -0.3V V V I /I = -50mA/-2.5mA O(on) O l DDTB113EC -7.2 DDTB123EC -3.8 DDTB143EC -1.8 DDTB114EC -0.88 Input Current I mA V = -5V l I DDTB122JC -28 DDTB113ZC -7.2 DDTB123YC -3.6 DDTB133HC -2.4 Output Current -0.5 A I V = -50V, V = 0V O(off) CC I DDTB113EC 33 DDTB123EC 39 DDTB143EC 47 DDTB114EC 56 DC Current Gain G V = -5V, I = -50mA l O O DDTB122JC 47 DDTB113ZC 56 DDTB123YC 56 DDTB133HC 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only, R2-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -40 V I = -1mA CEO C I = -50A Emitter-Base Breakdown Voltage DDTB123TC E I = -50A DDTB143TC E -5 V BV EBO DDTB114TC I = -50A E DDTB114GC I = -720A E Collector Cutoff Current -0.5 I A V = -50V CBO CB DDTB123TC -0.5 DDTB143TC -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDTB114TC -0.5 DDTB114GC -580 -300 Collector-Emitter Saturation Voltage -0.3 V V I = -50mA, I = -2.5mA CE(sat) C B DDTB123TC 100 250 600 DDTB143TC 100 250 600 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTB114TC 100 250 600 DDTB114GC 56 Gain-Bandwidth Product* 200 MHz f V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only DDTB (xxxx) C DS30385 Rev. 7 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT