Low Profile SMD Ultra Fast Recovery Rectifiers CURMT103-HF Thru. CURMT107-HF Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device SOD-123H Halogen Free 0.146(3.7) 0.130(3.3) Features 0.018(0.45) 0.006(0.15) -Excellent power dissipation offers better reverse leakage current and thermal resistance. 0.071(1.8) -Low profile surface mounted application in order 0.055(1.4) to optimize board space. -Tiny plastic SMD package. 0.006(0.15) 0.002(0.05) -High current capability. -Ultrafast recovery time for high efficiency. -High surge current capability. -Glass passivated chip junction. 0.040(1.0) 0.024(0.6) -Lead-free part meets RoHS requirments. 0.035(0.9) 0.035(0.9) 0.028(0.7) 0.028(0.7) Mechanical data -Epoxy: UL94V-0 rated flame retardant. -Case: Molded plastic, SOD-123H/MINI SMA Dimensions in inches and (millimeter) -Terminals: Solderable per MIL-STD-750, Method 2026. Circuit diagram -Polarity: Indicated by cathode band. -Mounting Position: any -Weight: 0.011 grams approx. Maximum Ratings and Electrical Characteristics (at TA=25C unless otherwise noted) CURMT CURMT CURMT Symbol Parameter Unit 103-HF 104-HF 107-HF Max. Repetitive peak reverse voltage VRRM 200 400 1000 V Max. Continuous reverse voltage VR 200 400 1000 V Max. RMS voltage VRMS 140 280 700 V Max. Forward rectified current IO 1.0 A Max. Forward voltage VF 1.00 1.30 1.70 V IF=1.0A Max. Reverse recovery time (note 1) ns TRR 50 75 Max. Forward surge current 8.3ms singe half sine-wave superimposed IFSM 25 A on rated load (JEDEC method) VR=VRRM TJ=25C 5.0 A Max. Reverse current IR VR=VRRM TJ=125C 150 Typ. Thermal resistance RJA 42 C/W Junction to ambient air Typ. Diode Junction capacitance pF CJ 20 f=1MHz and applied 4V DC reverse voltage Operating junction temperature TJ -55 to +150 C Storage temperature range TSTG -65 to +175 C Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A 2. Company reserves the right to improve product design , functions and reliability without notice. Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JU004 Page 1 Comchip Technology CO., LTD.Low Profile SMD Ultra Fast Recovery Rectifiers Rating and Characteristic Curves (CURMT103-HF Thru. CURMT107-HF) Fig.2 - Typical Forward Current Fig.1 - Typical Forward Characteristics Derating Curve 1.4 10 P.C.B. Mounted on 0.2 * 0.2(5mm*5mm) Copper Pad Areas 1.2 1.0 1.0 0.8 0.1 0.6 TJ=25C 0.4 0.01 Pulse width=300s 1% duty cycle 0.2 0.001 0 0 25 50 75 100 125 150 175 1.8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Lead Temperature, (C) Forward Voltage, (V) Fig.3- Test circuit diagram and reverse Fig.4- Maximum non-repetitive recovery time characteristics forward surge current 50 50W 10W TJ=25C NONINDUCTIVE NONINDUCTIVE 8.3ms single half sine wave, JEDEC method 40 ( ) (+) D.U.T. 25Vdc PULSE 30 GENERATOR (approx.) (NOTE 2) ( ) (+) 1W OSCILLISCOPE NON- (NOTE 1) 20 INDUCTIVE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 10 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 0 trr 1 10 100 +0.5A Number of cycles at 60Hz 0 Fig.5- Typical Junction Capacitance -0.25A 140 120 -1.0A 1cm 100 SET TIME BASE FOR 50 / 10ns / cm 80 60 40 20 0 0.01 0.1 1 10 100 Reverse voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: C QW-JU004 Page 2 Comchip Technology CO., LTD. CURMT105-HF~107-HF CURMT101-HF~103-HF CURMT104-HF Instantaneous Forward Current, (A) Peak forward surge current, (A) Junction capacitance, (pF) Average Forward Current, (A)