Product Information

PN4393 PBFREE

PN4393 PBFREE electronic component of Central Semiconductor

Datasheet
Central Semiconductor JFET 40Vgd N-Ch JFET 100 Rdson 625mW

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 5.6769 ( AUD 6.24 Inc GST) ea
Line Total: AUD 5.6769 ( AUD 6.24 Inc GST)

13471 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6459 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

Stock Image

PN4393 PBFREE
Central Semiconductor

1 : AUD 2.1054
10 : AUD 1.7268
100 : AUD 1.3446
500 : AUD 1.1394
1000 : AUD 0.9731
2500 : AUD 0.8245
5000 : AUD 0.8227
10000 : AUD 0.7926
25000 : AUD 0.7908

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Type
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
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Notes:- Show Stocked Products With Similar Attributes.

PN4391 PN4392 PN4393 www.centralsemi.com DESCRIPTION: N-CHANNEL The CENTRAL SEMICONDUCTOR PN4391 series SILICON JFET types are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Gate-Drain Voltage V 40 V GD Gate-Source Voltage V 40 V GS Gate Current I 50 mA G Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A PN4391 PN4392 PN4393 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=20V - 0.1 - 0.1 - 0.1 nA GSS GS I V =20V, T=100C - 0.2 - 0.2 - 0.2 A GSS GS A I V=20V 50 150 25 75 5.0 30 mA DSS DS I V =20V, V =12V - 0.1 - - - - nA D(OFF) DS GS I V =20V, V =7.0V - - - 0.1 - - nA D(OFF) DS GS I V =20V, V =5.0V - - - - - 0.1 nA D(OFF) DS GS I V =20V, V =12V, T=100C - 0.2 - - - - A D(OFF) DS GS A I V =20V, V =7.0V, T=100C - - - 0.2 - - A D(OFF) DS GS A I V =20V, V =5.0V, T=100C - - - - - 0.2 A D(OFF) DS GS A BV I=1.0A 40 - 40 40 - V GSS G V V =20V, I=1.0nA 4.0 10 2.0 5.0 0.5 3.0 V GS(OFF) DS D V V =0, I=1.0mA - 1.0 - 1.0 - 1.0 V GS(f) DS G V I=12mA - 0.4 - - - - V DS(ON) D V I=6.0mA - - - 0.4 - - V DS(ON) D V I=3.0mA - - - - - 0.4 V DS(ON) D r I =1.0mA, V=0 - 30 - 60 - 100 DS(ON) D GS r V =0, I =0, f=1.0kHz - 30 - 60 - 100 ds(on) GS D C V =12V, V =0, f=1.0MHz - 3.5 - - - - pF rss GS DS C V =7.0V, V =0, f=1.0MHz - - - 3.5 - - pF rss GS DS C V =5.0V, V =0, f=1.0MHz - - - - - 3.5 pF rss GS DS C V =20V, V =0, f=1.0MHz - 14 - 14 - 14 pF iss DS GS R1 (30-January 2012)PN4391 PN4392 PN4393 N-CHANNEL SILICON JFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A PN4391 PN4392 PN4393 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS t I =12mA - 5.0 - - - - ns r D(ON) t I =6.0mA - - - 5.0 - - ns r D(ON) t I =3.0mA - - - - - 5.0 ns r D(ON) t V =12V - 15 - - - - ns f GS(OFF) t V =7.0V - - - 20 - - ns f GS(OFF) t V =5.0V - - - - - 30 ns f GS(OFF) t I =12mA - 15 - - - - ns on D(ON) t I =6.0mA - - - 15 - - ns on D(ON) t I =3.0mA - - - - - 15 ns on D(ON) t V=12V - 20 - - - - ns off GS(OFF) t V=7.0V - - - 35 - - ns off GS(OFF) t V=5.0V - - - - - 50 ns off GS(OFF) TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Source 3) Gate MARKING: FULL PART NUMBER R1 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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