Product Information

2N6075A

2N6075A electronic component of Central Semiconductor

Datasheet
Triacs . .

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 4.1377 ( AUD 4.55 Inc GST) ea
Line Total: AUD 4.1377 ( AUD 4.55 Inc GST)

547 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
547 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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2N6075A
Central Semiconductor

1 : AUD 2.9192
10 : AUD 2.4946
100 : AUD 2.0346
250 : AUD 1.8931
500 : AUD 1.7639
1000 : AUD 1.5233
2000 : AUD 1.5074
5000 : AUD 1.4968
10000 : AUD 1.4614

     
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TM 2N6071, A, B 2N6073, A, B Central 2N6075, A, B Semiconductor Corp. SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power supplies. MARKING CODE: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N6071 2N6073 2N6075 J 2N6071A 2N6073A 2N6075A SYMBOL 2N6071B 2N6073B 2N6075B UNITS Peak Repetitive Off-State Voltage V V 200 400 600 V DRM, RRM RMS On-State Current (T =85C) I 4.0 A C T(RMS) Peak One Cycle Surge (60Hz, T =110C) I 30 A J TSM 2 2 2 I t Value for Fusing (t=8.3ms) I t 3.7 A s Peak Gate Power (T =85C) P 10 W C GM Average Gate Power (t=8.3ms, T =85C) P 0.5 W C G(AV) Peak Gate Voltage (T =85C) V 5.0 V C GM Storage Temperature T -40 to +150 C stg Junction Temperature T -40 to +110 C J Thermal Resistance 3.5 C/W JC Thermal Resistance 75 C/W JA Maximum Lead Temperature T C L 260 ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C A Series B Series SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS I I V =Rated V V T =25C 10 10 10 A DRM, RRM D DRM, RRM, J I I V =Rated V V T =110C 2.0 2.0 2.0 mA DRM, RRM D DRM, RRM, J I V =12V, R =100, QUAD I, T =25C 30 5.0 3.0 mA GT D L J I V =12V, R =100, QUAD II, T =25C - 5.0 3.0 mA GT D L J I V =12V, R =100, QUAD III, T =25C 30 5.0 3.0 mA GT D L J I V =12V, R =100, QUAD IV, T =25C - 10 5.0 mA GT D L J I V =12V, R =100, QUAD I, T = -40C 60 20 15 mA GT D L J I V =12V, R =100, QUAD II, T = -40C - 20 15 mA GT D L J I V =12V, R =100, QUAD III, T = -40C 60 20 15 mA GT D L J I V =12V, R =100, QUAD IV, T = -40C - 30 20 mA GT D L J I V =12V, I =1.0A, T =25C 30 15 15 mA H D T J I V =12V, I =1.0A, T = -40C 70 30 30 mA H D T J V V =12V, R =100, T =25C, QUAD I, II, III, IV 2.0 2.0 2.0 V GT D L J V V =12V, R =100, T = -40C, QUAD I, II, III, IV 2.5 2.5 2.5 V GT D L J V I =6.0A 2.0 2.0 2.0 V TM TM t I =14A, I =100mA 1.5 1.5 1.5 s on TM GT dv/dt V = Rated V , I =5.7A, T =85C 5.0 5.0 5.0 V/s D DRM TM J R0 (27-April 2004)TM 2N6071, A, B Central 2N6073, A, B Semiconductor Corp. 2N6075, A, B SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS TO-126 CASE - MECHANICAL OUTLINE DIMENSIONS LEAD CODE: INCHES MILLIMETERS 1) MT1 SYMBOL MIN MAX MIN MAX 2) MT2 A 0.094 0.110 2.40 2.80 3) GATE B 0.050 1.27 C 0.015 0.030 0.38 0.75 D 0.291 0.335 7.40 8.50 MARKING CODE: E 0.148 3.75 FULL PART NUMBER F 0.118 0.134 3.00 3.40 G 0.413 0.472 10.50 12.00 H 0.618 15.70 J 0.024 0.035 0.62 0.90 K 0.089 2.25 L 0.177 4.50 M 0.045 0.055 1.14 1.40 N 0.083 2.10 TO-126 (REV:R3) R0 (27-April 2004)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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