Product Information

2N5486

2N5486 electronic component of Central Semiconductor

Datasheet
JFET N-Ch 25Vdg JFET 25Vgs 30mA 10mA

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 2.7777 ( AUD 3.06 Inc GST) ea
Line Total: AUD 2.7777 ( AUD 3.06 Inc GST)

2277 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2599 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

2N5486
Central Semiconductor

1 : AUD 2.7777
10 : AUD 2.3708
100 : AUD 1.9462
250 : AUD 1.9285
500 : AUD 1.6843
1000 : AUD 1.4384
5000 : AUD 1.4384

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Drain Source Voltage Vds
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Power Dissipation
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

2N5484 2N5485 2N5486 www.centralsemi.com The CENTRAL SEMICONDUCTOR 2N5484, 2N5485, SILICON and 2N5486 are silicon N-Channel JFETs designed for N-CHANNEL JFET RF amplifier and mixer applications. These devices will operate well in the VHF/UHF frequency range. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Gate Voltage V 25 V DG Gate-Source Voltage V 25 V GS Drain Current I 30 mA D Continuous Gate Current I 10 mA G Power Dissipation P 310 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5484 2N5485 2N5486 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=20V - 1.0 - 1.0 - 1.0 nA GSS GS I V =20V, T=100C - 0.2 - 0.2 - 0.2 A GSS GS A I V=15V 1.0 5.0 4.0 10 8.0 20 mA DSS DS BV I=1.0A 25 - 25 - 25 - V GSS G V V =15V, I=10nA 0.3 3.0 0.5 4.0 2.0 6.0 V GS(off) DS D y V =15V, V =0, f=1.0kHz 3.0 6.0 3.5 7.0 4.0 8.0 mS fs DS GS y V =15V, V =0, f=1.0kHz - 50 - 60 - 75 S os DS GS C V =15V, V =0, f=1.0MHz - 5.0 - 5.0 - 5.0 pF iss DS GS C V =15V, V =0, f=1.0MHz - 2.0 - 2.0 - 2.0 pF oss DS GS C V =15V, V =0, f=1.0MHz - 1.0 - 1.0 - 1.0 pF rss DS GS R V =15V, V =0, f=100MHz - 100 - - - - S e(yis) DS GS R V =15V, V =0, f=400MHz - - - 1.0 - 1.0 mS e(yis) DS GS R V =15V, V =0, f=100MHz - 75 - - - - S e(yos) DS GS R V =15V, V =0, f=400MHz - - - 100 - 100 S e(yos) DS GS R V =15V, V =0, f=100MHz 2.5 - - - - - mS e(yfs) DS GS R V =15V, V =0, f=400MHz - - 3.0 - 3.5 - mS e(yfs) DS GS R1 (2-May 2014)2N5484 2N5485 2N5486 SILICON N-CHANNEL JFET ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5484 2N5485 2N5486 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS NF V =15V, V =0, R =1M, f=1.0KHz - 2.5 - 2.5 - 2.5 dB DS GS G NF V =15V, I =1.0mA, R =1K, f=100MHz - 3.0 - - - - dB DS D G NF V =15V, I =1.0mA, R =1K, f=200MHz - 4.0TYP - - - - dB DS D G NF V =15V, I =4.0mA, R =1K, f=100MHz - - - 2.0 - 2.0 dB DS D G NF V =15V, I =4.0mA, R =1K, f=400MHz - - - 4.0 - 4.0 dB DS D G G V =15V, I =1.0mA, f=100MHz 16 25 - - - - dB PS DS D G V =15V, I =1.0mA, f=200MHz - 14 TYP - - - - dB PS DS D G V =15V, I =4.0mA, f=100MHz - - 18 30 18 30 dB PS DS D G V =15V, I =4.0mA, f=400MHz - - 10 20 10 20 dB PS DS D TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Source 3) Gate MARKING: FULL PART NUMBER R1 (2-May 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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