TISP4500H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test Agency Recognition - Off-State Voltage ......................................................... >245 V rms - For Controlled Environment .....................................0 C to 70 C Description Ion-Implanted Breakdown Region UL File Number: E215609 Precise and Stable Voltage Low Voltage Overshoot under Surge SMBJ Package (Top View) V V DRM (BO) Device V 0 C V 70 C TISP4500H3BJ 350 500 R 1 2 T Rated for International Surge Wave Shapes MD-SMB-004-a I PPSM Wave Shape Standard A Device Symbol 2/10 500 GR-1089-CORE T 10/250 GR-1089-CORE 230 10/700 ITU-T K.20/21/45 200 10/1000 GR-1089-CORE 100 ........................................................................ UL Recognized R SD-TISP4xxx-001-a Description This device is designed to limit overvoltages on the telephone line to 500 V over the temperature range. The minimum off-state voltage of 350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations K.20/21/45 230 V rms power cross test condition (test number 2.3.1). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. How To Order Marking Order As Device PackageCarrier Code Std. Qty. TISP4500H3B J SMB (DO-214AA) E m bossed T a pe Reeled TISP4500H3BJR-S 4500H3 3000 WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov APRIL 2001 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4500H3BJ Overvoltage Protector Absolute Maximum Ratings, 0 C T 70 C (Unless Otherwise Noted) A RatingSymbol ValueUnit Repetitive peak off-state voltage V 350V DRM Non-repetitive peak on-state pulse current (see Notes 1 and 2) 500 2/10 (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) T = 25 C A I 230 A 10/250 (Telcordia GR-1089-CORE, 10/250 s voltage wave shape) T = 25 C PPSM A 200 10/700 (ITU-T K.20/21/45, 5/310 s current wave shape) 100 10/1000 (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) T = 25 C A Non-repetitive peak on-state current (see Notes 1, 2 and 3) I 55 A 50 Hz, 20 ms (1 cycle) TSM 2.0 50 Hz, 1000 s Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, 0 C T 70 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit Repetitive peak off- T = 25 C 5 A I V = V A DRM D DRM state current T = 70 C 10 A V Breakover voltage dv/dt = 250 V/ms, R = 300 500 V (BO) SOURCE ITU-T recommendation K.44 (02/2000) Impulse breakover V Figure A.3-1/K.44 10/700 impulse generator 500 V (BO) voltage Charge Voltage = 4 kV I Breakover current dv/dt = 250 V/ms, R = 300 0.6 A (BO) SOURCE I Holding current I = 5 A, di/dt = -/+30 mA/ms 0.15 A H T I Off-state current V = 50V T = 70 C 10 A D D A f = 1 MHz, Vd = 1 V rms, V = 0 84 D f = 1 MHz, Vd = 1 V rms, V = -1 V 67 D C Off-state capacitance pF off f = 1 MHz, Vd = 1 V rms, V = -2 V 62 D f = 1 MHz, Vd = 1 V rms, V = -50 V 31 D Thermal Characteristics Parameter Test Conditions Min Typ Max Unit EIA/JESD51-3 PCB, I = I , T TSM(1000) 113 T = 25 C, (see Note 5) A R Junction to free air thermal resistance C/W JA 265 mm x 210 mm populated line card, 50 4-layer PCB, I = I , T = 25 C T TSM(1000) A NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. APRIL 2001 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.