TISP4070M3BJ THRU TISP4115M3BJ,
TISP4125M3BJ THRU TISP4220M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxM3BJ Overvoltage Protector Series
ITU-T K.20/21/44/45 rating ................ 4 kV 10/700, 100 A 5/310
SMBJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
R(B)12 T(A)
V V
DRM (BO)
Device
V V
MDXXBGE
4070 58 70
4080 65 80
Device Symbol
4095 75 95
T
4115 90 115
4125 100 125
4145 120 145
4165 135 165
4180 145 180
4200 155 200
SD4XAA
4220 160 220
R
4240 180 240
Terminals T and R correspond to the
4250 190 250
alternative line designators of A and B
4265 200 265
4290 220 290
I
TSP
4300 230 300
Wave Shape Standard
4350 275 350
A
4360 290 360
2/10 s GR-1089-CORE 300
4395 320 395
8/20 s IEC 61000-4-5 220
4400 300 400
10/160 s FCC Part 68 120
Low Differential Capacitance ................................. 39 pF max.
10/700 s ITU-T K.20/21/45 100
10/560 s FCC Part 68 75
............................................ UL Recognized Component
10/1000 s GR-1089-CORE 50
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
How To Order
Device Package Carrier Order As
TISP4xxxM3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP4xxxM3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
*RoHS COMPLIANT
TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted)
A
Rating Symbol Value Unit
4070 58
4080 65
4095 75
4115 90
4125 100
4145 120
4165 135
4180 145
4200 155
Repetitive peak off-state voltage, (see Note 1) 4220 V 160 V
DRM
4240 180
4250 190
4265 200
4290 220
4300 230
4350 275
4360 290
4395 320
4400 300
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300
8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 s (FCC Part 68, 10/160 s voltage wave shape) 120
5/200 s (VDE 0433, 10/700 s voltage wave shape) 110
I A
TSP
0.2/310 s (I3124, 0.5/700 s voltage wave shape) 100
5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 100
5/310 s (FTZ R12, 10/700 s voltage wave shape) 100
10/560 s (FCC Part 68, 10/560 s voltage wave shape) 75
10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave 30
16.7 ms (60 Hz) full sine wave I 32 A
TSM
1000 s 50 Hz/60 Hz a.c. 2.1
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di /dt 300 A/s
T
Junction temperature T -40 to +150 C
J
Storage temperature range T -65 to +150 C
stg
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T =25 C.
J
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures
above 25 C.
NOVEMBER 1997 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.