TISP4070M3AJ THRU TISP4115M3AJ, TISP4125M3AJ THRU TISP4220M3AJ, TISP4240M3AJ THRU TISP4395M3AJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxM3AJ Overvoltage Protector Series 4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating SMAJ Package (Top View) SMA (DO-214AC) Package 25% Smaller Placement Area than SMB Low Differential Capacitance ........................................... 39 pF R (B)12 T (A) Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge MDXXCCE V V DRM (BO) Device Device Symbol V V T 4070 58 70 4080 65 80 4090 68 90 4095 75 95 4115 90 115 SD4XAA 4125 100 125 R 4145 120 145 Terminals T and R correspond to the 4165 135 165 alternative line designators of A and B 4180 145 180 Rated for International Surge Wave Shapes 4200 155 200 I TSP 4220 160 220 Wave Shape Standard A 4240 180 240 2/10 s GR-1089-CORE 300 4250 190 250 4265 200 265 8/20 s IEC 61000-4-5 220 4290 220 290 10/160 s FCC Part 68 120 4300 230 300 10/700 s ITU-T K.20/21/45 100 4320 240 320 10/560 s FCC Part 68 75 4350 275 350 10/1000 s GR-1089-CORE 50 4360 290 360 4395 320 395 ............................................ UL Recognized Components How To Order Device Package Carrier Order As Embossed Tape Reeled TISP4xxxM3AJR-S TISP4xxxM3AJ AJ (J-Bend DO-214AC/SMA) Insert xxx value corresponding to protection voltages of 070, 080, 095, etc. Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex AUGUST 2001 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. *RoHS COMPLIANT TISP4xxxM3AJ Overvoltage Protector Series Description (continued) The TISP4xxxM3AJ range consists of twenty voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMAJ (JEDEC DO-214AC with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents, the 100 A 10/1000 TISP4xxxH3BJ series in the SMB (JEDEC DO-214AA) package is available. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4070 58 4080 65 4090 68 4095 75 4115 90 4125 100 4145 120 4165 135 4180 145 4200 155 Repetitive peak off-state voltage, (see Note 1) 4220 V 160 V DRM 4240 180 4250 190 4265 200 4290 220 4300 230 4320 240 4350 275 4360 290 4395 320 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 120 5/200 s (VDE 0433, 10/700 s voltage wave shape) 110 I A TSP 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 100 5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 100 5/310 s (FTZ R12, 10/700 s voltage wave shape) 100 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 75 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 50 Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 23 16.7 ms (60 Hz) full sine wave I 24 A TSM 1000 s 50 Hz/60 Hz a.c. 1.6 Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di /dt 300 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures. 2. Initially, the TISP4xxxM3AJ must be in thermal equilibrium with T =25 C. J 3. The surge may be repeated after the TISP4xxxM3AJ returns to its initial conditions. 4. See Applications Information and Figure 11 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C. AUGUST 2001 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.