TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Agency Recognition Low Capacitance 4015......................................................................................... 28 pF Description 4030......................................................................................... 27 pF 4040......................................................................................... 23 pF UL File Number: E215609 Digital Line Signal Level Protection - ISDN - xDSL SMA Package (Top View) Safety Extra Low Voltage, SELV, values V V DRM (BO) R (B) 12 T (A) Device V V 4015 8 15 MDXXCCE 4030 15 30 4040 25 40 SMB Package (Top View) 30 A L Series specified for: - ITU-T recommendations K.20, K.45, K.21 R(B) 1 2 T(A) - FCC Part 68 and GR-1089-CORE I TSP Wave Shape Standard MDXXBGF A 2/10 s GR-1089-CORE 150 Device Symbol 8/20 s IEC 61000-4-5 120 T 10/160 s FCC Part 68 65 ITU-T K.20/45/21 10/700 s 45 FCC Part 68 10/560 s FCC Part 68 35 10/1000 s GR-1089-CORE 30 SD4XAA Available in SMA and SMB Packages R SMA Saves 25 % Placement Area Over SMB Terminals T and R correspond to the alternative line designators of A and B Description These devices are designed to limit overvoltages on digital ................................................. UL Recognized Components telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. How to Order Order As Device Package Carrier AUGUST 1999 REVISED JULY 2019 SMA / DO -214AC J - B e nd (AJ ) TISP40xxL1AJR-S E m bo sse d T a pe R e e l e d *RoHS Directive 2015/863, Mar 31, 2015 and Annex. TI SP40xxL1 Specifications are subject to change without notice. (R) SMB / DO-214AA J - B e nd (B J ) TISP40xxL1BJR-S Users should verify actual device performance in their I n sert x x val u e cor r e s po nd i n g to p rotecti o n v o l t a g e s of 15 V , 30 V and 40 V. specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last WARNING Cancer and Reproductive Harm page of this document, and at www.P65Warnings.ca.gov www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxL1AJ/BJ VLV Overvoltage Protectors Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4015 8 Repetitive peak off-state voltage 4030 V 15 V DRM 4040 25 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 150 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 120 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 65 I A TSP 5/310 s (ITU-T K.20/45/21, 10/700 s voltage wave shape) 45 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 45 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 35 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) 30 Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms (50 Hz) full sine wave 20 16.7 ms (60 Hz) full sine wave 22 I A TSM 0.2 s 50 Hz/60 Hz a.c. 13 2 s 50 Hz/60 Hz a.c. 5 1000 s 50 Hz/60 Hz a.c. 1.8 Initial rate of rise of current (2/10 waveshape) di/dt 130 A/s Maximum junction temperature T 150 C JM Storage temperature range T -65 to +150 C stg NOTES: 1. Initially, the device must be in thermal equilibrium with T =25 C. J 2. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit Repetitive peak off- I V =V 5 A DRM D DRM state current 4015 15 V Breakover voltage di/dt = 0.8 A/ms 4030 30 V (BO) 4040 40 dv/dt = 1000 V/s, Linear voltage ramp, 4015 34 Impulse breakover Maximum ramp value = 500 V V 4030 50 V (BO) voltage di/dt = 5 A/s, Linear current ramp, 4040 63 Maximum ramp value = 10 A I Breakover current di/dt = 0.8 A/ms 0.8 A (BO) V =6V 4015 D I Off-state current V =13V 4030 2 A D D V =22V 4040 D I Holding current I = 5 A, di/dt= +/- 30mA/ms 50 mA H T AUGUST 1999 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.