TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
LP PACKAGE
2 A Continuous On-State Current
(TOP VIEW)
15 A Surge-Current
G
1
Glass Passivated Wafer
A 2
3
K
400 V to 600 V Off-State Voltage
MDC1AA
Max I of 200 A
GT
LP PACKAGE
Package Options
WITH FORMED LEADS
(TOP VIEW)
PACKAGE PACKING PART # SUFFIX
LP Bulk (None)
G
LP with fomed leads Tape and Reel R
1
A 2
3
K
MDC1AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TICP106D 400
Repetitive peak off-state voltage (see Note 1) V V
DRM
TICP106M 600
TICP106D 400
Repetitive peak reverse voltage V V
RRM
TICP106M 600
Continuous on-state current at (or below) 25C case temperature (see Note 2) I 2 A
T(RMS)
Surge on-state current (see Note 3) I 15 A
TSM
Peak positive gate current (pulse width 300 s) I 0.2 A
GM
Average gate power dissipation (see Note 4) P 0.3 W
G(AV)
Operating case temperature range T -40 to +110 C
C
Storage temperature range T -40 to +125 C
stg
Lead temperature 3.2 mm from case for 10 seconds T 230 C
L
NOTES: 1. These values apply when the gate-cathode resistance R = 1 k .
GK
2. These values apply for continuous dc operation with resistive load. Above 25C derate linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
MARCH 1988 - REVISED SEPTEMBER 2002
1
Specifications are subject to change without notice.
OBSOLETETICP106 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
I V = rated V R = 1 k 20 A
DRM D DRM GK
off-state current
Repetitive peak
I V = rated V I = 0 200 A
RRM R RRM G
reverse current
I Gate trigger current V = 12 V R = 100 t 20 s 5 200 A
GT AA L p(g)
R = 100
L
V Gate trigger voltage V = 12 V t 20 s 0.4 1 V
GT AA p(g)
R =1k
GK
I Holding current V = 12 V R =1k Initiating I = 10 mA 5 mA
H AA GK T
V On-state voltage I =1A (see Note 5) 1.5 V
T T
NOTE 5: This parameter must be measured using pulse techniques, t = 1 ms, duty cycle 2 %. Voltage sensing-contacts, separate from
p
the current carrying contacts, are located within 3.2 mm from the device body.
MARCH 1988 - REVISED SEPTEMBER 2002
2
Specifications are subject to change without notice.
OBSOLETE