BU426A

BU426, BU426A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction SOT-93 PACKAGE (TOP VIEW) 900 Volt Blocking Capability B 1 C 2 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BU426 800 Collector-base voltage (I = 0) V V E CBO BU426A 900 BU426 800 Collector-emitter voltage (V = 0) V V BE CES BU426A 900 BU426 375 Collector-emitter voltage (I = 0) V V B CEO BU426A 400 Continuous collector current I 6A C Peak collector current (see Note 1) I 10 A CM Continuous base current I +2, -0.1 A B Peak base current (see Note 1) I 3 A BM Continuous device dissipation at (or below) 50C case temperature P 70 W tot Operating junction temperature range T -65 to +150 C j Storage temperature range T -65 to +150 C stg NOTE 1: This value applies for t 2 ms, duty cycle 2%. p AUGUST 1978 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter BU426 375 V I = 100 mA L = 25 mH (see Note 2) V CEO(sus) C sustaining voltage BU426A 400 V = 800 V V =0 BU426 1 CE BE Collector-emitter V = 900 V V =0 BU426A 1 CE BE I mA CES cut-off current V = 800 V V =0 T = 125C BU426 2 CE BE C V = 900 V V =0 T = 125C BU426A 2 CE BE C Emitter cut-off I V = 10 V I =0 10 mA EBO EB C current Forward current h V = 5 V I = 0.6 A (see Notes 3 and 4) 30 60 FE CE C transfer ratio Collector-emitter I = 0.5 A I = 2.5A 1.5 B C V (see Notes 3 and 4) V CE(sat) saturation voltage I = 1.25 A I = 4A 3 B C Base-emitter I = 0.5 A I = 2.5A 1.4 B C V (see Notes 3 and 4) V BE(sat) saturation voltage I = 1.25 A I = 4A 1.6 B C NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, t = 300 s, duty cycle 2%. p 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 1.1 C/W JC resistive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t Turn on time 0.3 0.6 s on I = 2.5 A I = 0.5 A I = -1 A C B(on) B(off) t Storage time 23.5 s s V = 250 V (see Figures 1 and 2) CC t Fall time 0.15 s f I = 2.5 A I = 0.5 A I = -1 A C B(on) B(off) t Fall time 0.2 0.75 s f V = 250 V T = 95C CC C Voltage and current values shown are nominal exact values vary slightly with transistor parameters. AUGUST 1978 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.