Product Information

AQD-SD3L4GN16-SQ

AQD-SD3L4GN16-SQ electronic component of Advantech

Datasheet
Memory Modules 4G SO-DDR3-1600 256X8 1.35V SAM

Manufacturer: Advantech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : AUD 158.4
N/A

Obsolete
     
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204Pin DDR3L 1600 SO-DIMM 4GB Based on 256Mx8 AQD-SD3L4GN16-SQ Advantech AQD-SD3L4GN16-SQ Datasheet Rev. 1.0 2014-05-12 Transcend Information Inc. 1 204Pin DDR3L 1600 SO-DIMM 4GB Based on 256Mx8 AQD-SD3L4GN16-SQ Description Pin Identification Symbol Function DDR3L SO-DIMM is high-speed, low power memory module that use 256Mx8bits DDR3L SDRAM in FBGA A0~A14, BA0~BA2 Address/Bank input package and a 2048 bits serial EEPROM on a 204-pin DQ0~DQ63 Data Input / Output. printed circuit board. DDR3L SO-DIMM is a Dual In-Line DQS0~DQS7 Data strobes Memory Module and is intended for mounting into 204-pin /DQS0~/DQS7 Differential Data strobes edge connector sockets. CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) Synchronous design allows precise cycle control with the CKE0, CKE1 Clock Enable Input. use of system clock. Data I/O transactions are possible ODT0, ODT1 On-die termination control line on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be /CS0, /CS1 DIMM Rank Select Lines. useful for a variety of high bandwidth, high performance /RAS Row Address Strobe memory system applications. /CAS Column Address Strobe Features /WE Write Enable RoHS compliant products. DM0~DM7 Data masks/high data strobes JEDEC standard 1.35V(1.28V~1.45V) Power supply VDD Voltage power supply JEDEC standard 1.5V(1.425V~1.575V) Power supply V DQ/ V CA Power Supply for Reference REF REF VDDQ=1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Clock Freq: 667MHZ for 1333Mb/s/Pin. VDDSPD SPD EEPROM Power Supply Clock Freq: 800MHZ for 1600Mb/s/Pin. I2C serial bus address select for SA0~SA2 Programmable CAS Latency: 5, 6, 7, 8, 9 ,10 ,11 EEPROM Programmable Additive Latency (Posted /CAS): SCL I2C serial bus clock for EEPROM 0,CL-2 or CL-1 clock SDA I2C serial bus data for EEPROM Programmable /CAS Write Latency (CWL) VSS Ground = 7(DDR3-1333) , 8(DDR3-1600) /RESET Set DRAMs Known State 8 bit pre-fetch VTT SDRAM I/O termination supply Burst Length: 4, 8 Bi-directional Differential Data-Strobe NC No Connection Internal calibration through ZQ pin On Die Termination with ODT pin Serial presence detect with EEPROM Asynchronous reset Golden finger thicker 30 Transcend Information Inc. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH CORPORATION
ADVANTECH B+B SMARTWORKS
Advantech Corp

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