Product Information

DDR3 1333 204P 4GB w/ECC(Indus.)

DDR3 1333 204P 4GB w/ECC(Indus.) electronic component of ADLINK Technology

Datasheet
DIMM / SO-DIMM / SIMM DDR3 1333 204P 4GB w/ECC Industrial

Manufacturer: ADLINK Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 277.3824 ( AUD 305.12 Inc GST) ea
Line Total: AUD 277.3824 ( AUD 305.12 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Wed. 17 Jul to Fri. 19 Jul

MOQ : 1
Multiples : 1
1 : AUD 277.3824
10 : AUD 274.5806
25 : AUD 268.181
50 : AUD 260.306

     
Manufacturer
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RoHS - XON
Icon ROHS
Memory Size
Memory Type
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Notes:- Show Stocked Products With Similar Attributes.

TS256MSK72V3N-I(TS7L8MDS0-0000) TS256MSK72V3N-I(TS7L8MDS0-0000) 204Pin DDR3 1333 Industrial ECC SO-DIMM TS256MSK72V3N-I(TS7L8MDS0-0000) TS512MSK72V3N-I(TS8L8MDS0-0000) 2GB~4GB Based on 256Mx8 TS512MSK72V3N-I(TS8L8MDS0-0000) TS512MSK72V3N-I(TS8L8MDS0-0000) Description Pin Identification Symbol Function DDR3 Industrial ECC SO-DIMM is high-speed, low power memory module that use 256Mx8bits DDR3 SDRAM in A0~A14, BA0~BA2 Address/Bank input FBGA package and a 2048 bits serial EEPROM on a DQ0~DQ63 Data Input / Output. 204-pin printed circuit board. DDR3 Industrial ECC DQS0~DQS8 Data strobes SO-DIMM is a Dual In-Line Memory Module and is /DQS0~/DQS8 Differential Data strobes intended for mounting into 204-pin edge connector CB0~CB7 DIMM ECC check bits sockets. CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) Synchronous design allows precise cycle control with the CKE0, CKE1 Clock Enable Input. use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, ODT0, ODT1 On-die termination control line programmable latencies allow the same device to be /CS0, /CS1 DIMM Rank Select Lines. useful for a variety of high bandwidth, high performance /RAS Row Address Strobe memory system applications. /CAS Column Address Strobe /WE Write Enable Features DM0~DM8 Data masks/high data strobes Operating Temperature : -40C to +85C VDD Voltage power supply RoHS compliant products. JEDEC standard 1.5V 0.075V Power supply VDDQ Voltage Power Supply for DQS VDDQ=1.5V 0.075V V DQ/ V CA Power Supply for Reference REF REF Clock Freq: 667MHZ for 1333Mb/s/Pin. VDDSPD SPD EEPROM Power Supply Programmable CAS Latency: 5, 6, 7, 8, 9 I2C serial bus address select for SA0~SA1 Programmable Additive Latency (Posted /CAS): EEPROM 0,CL-2 or CL-1 clock SCL I2C serial bus clock for EEPROM Programmable /CAS Write Latency (CWL) SDA I2C serial bus data for EEPROM = 7(DDR3-1333) VSS Ground 8 bit pre-fetch Burst Length: 4, 8 /RESET Set DRAMs Known State Bi-directional Differential Data-Strobe VTT SDRAM I/O termination supply Internal calibration through ZQ pin NC No Connection On Die Termination with ODT pin Serial presence detect with EEPROM On DIMM thermal Sensor Asynchronous reset Transcend Information Inc. 1 TS256MSK72V3N-I(TS7L8MDS0-0000) TS256MSK72V3N-I(TS7L8MDS0-0000) 204Pin DDR3 1333 Industrial ECC SO-DIMM TS256MSK72V3N-I(TS7L8MDS0-0000) TS512MSK72V3N-I(TS8L8MDS0-0000) 2GB~4GB Based on 256Mx8 TS512MSK72V3N-I(TS8L8MDS0-0000) TS512MSK72V3N-I(TS8L8MDS0-0000) Dimensions (Unit: millimeter) Note: 1. Tolerances on all dimensions +/-0.15mm unless otherwise specified. Transcend Information Inc. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)

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