About MOSFET

Texas Instruments MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD25483F4T


MOSFET 20V,P-Ch FemtoFET MOSFET
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Texas Instruments 2303
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AUD 0.5962
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- 1.6 A- 20 V245 mOhmsP - channel- 12 V- 950 mV- 55 C+ 150 C500 mWSmd/smtPICOSTAR - 3Reel   0.96 nC   
CSD22204W


MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
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Texas Instruments 2289
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AUD 0.3543
Multiples of: 1

- 5 A- 8 V14 mOhmsP - Channel    1.7 WSmd/SmtBGA - 9ReelSi1 Channel- 6 V   Nexfet
CSD17505Q5A


MOSFET 30V,NCh NexFET Power MOSFET
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Texas Instruments 2252
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AUD 1.2194
Multiples of: 1

100 A30 V4.6 mOhmsN - Channel 1.3 V- 55 C+ 150 C3.2 WSmd/SmtSON - 8ReelSi1 Channel20 V10 nC  Nexfet
TPS1100DR


Texas Instruments MOSFET Single P-Ch Enh-Mode MOSFET
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Texas Instruments 2226
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AUD 1.1007
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1.6 A15 V400 mOhms @ 4.5 vP - Channel  - 40 C+ 125 C791 mWSmd/SmtSOIC - 8ReelSi1 Channel- 15 v , 2 V Enhancement  
CSD17579Q3AT


MOSFET 30V NCh NexFET Pwr MOSFET
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Texas Instruments 2223
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AUD 0.8654
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20 A30 V11.8 mOhmsN - Channel 1.5 V- 55 C+ 150 C29 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V5.3 nC  Nexfet
CSD86360Q5D


Mosfet Array 2 N-Channel (Half Bridge) 25V 50A 13W Surface Mount 8-LSON (5x6)
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Texas Instruments 2148
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AUD 2.0444
Multiples of: 1

50 A25 V N - Channel 1 v , 750 mV- 55 C+ 125 C13 WSmd/smtSON - 8ReelSi2 Channel8 V9.7 nC , 23 nCEnhancement Nexfet
CSD17311Q5


N-Channel 30 V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 2123
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AUD 1.5041
Multiples of: 1

100 A30 V2.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C3.2 WSmd/SmtSON - 8ReelSi1 Channel10 V24 nC  Nexfet
CSD17312Q5


N-Channel 30 V 38A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 2106
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AUD 1.7067
Multiples of: 1

38 A30 V1.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C3.2 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel10 V28 nC  Nexfet
CSD87588N


Mosfet Array 2 N-Channel (Half Bridge) 30V 25A 6W Surface Mount 5-PTAB (3x2.5)
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Texas Instruments 2008
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AUD 0.9058
Multiples of: 1

25 A , 25 A30 v , 30 V10.4 mOhms , 3.5 mOhmsN - Channel20 V1.1 v to 1.9 V- 55 C+ 150 C6 WSmd/SmtPTAB - 5ReelSi2 Channel20 V2.8 nC  Nexfet
CSD17501Q5A


MOSFET 30V,NCh NexFET Pwr MOSFET
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Texas Instruments 1981
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AUD 1.4512
Multiples of: 1

100 A30 V2.9 mOhmsN - Channel 1 V- 55 C+ 150 C3.2 WSmd/SmtSON - 5ReelSi1 Channel10 V13.2 nCEnhancement Nexfet
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