About MOSFET

Texas Instruments MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD13302W


MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA
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Texas Instruments 5302
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AUD 0.1588
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1.6 A 17.1 mOhmsN - channel     Smd/SmtDSBGA - 4Cut TapeSi1_Channel    Nexfet
CSD17305Q5A


MOSFET 30V N Channel NexFET Power MOSFET
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Texas Instruments 2433
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AUD 1.1231
Multiples of: 1

60 A30 V2.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C3.1 WSmd/SmtSON - 5ReelSi1 Channel10 V14.1 nC  Nexfet
CSD25402Q3A


mosfet p trench 20v 76a 1.15v @ 250ua 8.9 m @ 10a,4.5v vsonp-8 rohs
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Texas Instruments 2425
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AUD 0.3405
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CSD17322Q5A


Texas Instruments MOSFET 30V,NCh Nex FET Pwr MOSFET
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Texas Instruments 2415
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AUD 0.679
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16 A30 V12.4 mOhmsN - Channel 1.6 V- 55 C+ 150 C3 WSmd/SmtVSON - FET - 8ReelSi1 Channel10 V3.6 nC  Nexfet
CSD18514Q5A


MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 2361
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AUD 0.5352
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100 A40 V6.0 mOhmsN - channel 1.5 V- 55 C+ 150 C74 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V38 nCEnhancement Nexfet
CSD16410Q5A


MOSFET N-Ch NexFET Power MOSFETs
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Texas Instruments 2358
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AUD 0.5275
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60 A25 V9.6 mOhmsN - Channel 1.9 V- 55 C+ 150 C3 WSmd/SmtQFN - 8ReelSi1 Channel16 V3.9 nCEnhancement Nexfet
CSD17579Q3A


Texas Instruments MOSFET CSD17579Q3A 30 V 8-VSONP
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Texas Instruments 2332
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AUD 0.2085
Multiples of: 5

39 A30 V10.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C29 WSmd/SmtVSONP - 8ReelSi1 Channel10 V15 nCEnhancement Nexfet
CSD23381F4T


P-Channel 12 V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
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Texas Instruments 2326
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AUD 0.5458
Multiples of: 1

- 2.3 A- 12 V175 mOhmsP - channel- 8 V- 950 mV- 55 C+ 150 C500 mWSmd/smtPICOSTAR - 3ReelSi1 Channel- 8 V1.14 nC  Nexfet
CSD23202W10T


P-Channel 12 V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
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Texas Instruments 2322
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AUD 0.6717
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- 2.2 A- 12 V123 mOhmsP - channel- 6 V- 0.6 V- 55 C+ 150 C1 WSmd/smtDSBGA - 4ReelSi1 Channel- 6 V2.9 nC  Nexfet
CSD17552Q5A


N-Channel 30 V 17A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 2315
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AUD 0.6809
Multiples of: 1

17 A30 V7.5 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C3 WSmd/SmtVSON - FET - 8ReelSi1 Channel20 V9 nC  Nexfet
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