About MOSFET

ON Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Technology
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLJD3119CTBG


ON Semiconductor MOSFET COMP 2X2 20V 3.8A 100mOhm
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ON Semiconductor 91179
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AUD 0.4795
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3.8 A21 v , - 20 V100 mOhmsN - Channel, P - Channel8 V - 55 C+ 150 C710 mWSmd/SmtWDFN - 6ReelSi2 Channel8 V Enhancement  
FDS8984


Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
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ON Semiconductor 90712
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AUD 0.3998
Multiples of: 1

   Dual N Channel               
NTHL070N120M3S


MOSFET SIC MOS TO247-3L 70MOHM 1200V M3
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ON Semiconductor 82731
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AUD 15.4231
Multiples of: 1

                   
2V7002KT1G


N-Channel 60 V 320mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 81480
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AUD 0.0572
Multiples of: 3000

380 mA60 V2.5 OhmsN - Channel 2.3 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel 0.7 nC Aec - Q101 
NTH4L045N065SC1


MOSFET SIC MOS TO247-4L 650V
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ON Semiconductor 80833
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AUD 22.3269
Multiples of: 1

55 A650 V50 mOhmsN - Channel 4.3 V- 55 C+ 175 C187 WThrough HoleTO - 247 - 4TubeSi1 Channel- 8 V , + 22 V105 nCEnhancement  
NTF2955T1G


P-Channel 60 V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
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ON Semiconductor 78570
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AUD 0.8104
Multiples of: 1000

- 2.6 A- 60 V145 mOhmsP - Channel20 V - 55 C+ 175 C2.3 WSmd/SmtSOT - 223 - 3Reel    Enhancement  
FDMS7678


MOSFET 30V/20V N-Ch PowerTrench SyncFET
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ON Semiconductor 78147
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AUD 0.5524
Multiples of: 1

17.5 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C41 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
NCV8402ASTT3G


ON Semiconductor MOSFET 42V 2.0A
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ON Semiconductor 77600
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AUD 0.7073
Multiples of: 4000

2 A55 V165 mOhmsN - Channel    1.1 WSmd/SmtSOT - 223 - 3ReelSi2 Channel   Aec - Q101 
FQD7P06TM


MOSFET 60V P-Channel QFET
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ON Semiconductor 76242
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AUD 0.5599
Multiples of: 1

5.4 A60 V450 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252ReelSi1 Channel25 V Enhancement  
NTA4153NT1G


MOSFET 20V 915mA N-Channel
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ON Semiconductor 75660
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AUD 0.0908
Multiples of: 3000

915 mA20 V230 mOhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3Cut TapeSi1 Channel4.5 V1.82 nCEnhancement  
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