About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Package / Case
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Packaging
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Technology
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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Qualification
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC110N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 88052
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AUD 0.6705
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50 A60 V9 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V33 nCEnhancement Optimos
BSZ110N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 86950
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AUD 0.5732
Multiples of: 1

20 A60 V11 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
BSP135 H6327


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 83437
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AUD 0.9961
Multiples of: 1

20 mA600 V60 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.7 nCDepletion  
IPG20N06S4L26ATMA1


Infineon Technologies MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
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Infineon 82760
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AUD 0.7378
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         Smd/SmtTDSON - 8Reel       
BSS138WH6433XTMA1


Infineon Technologies MOSFET N-Ch 60V 280mA SOT-323-3
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Infineon 82675
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AUD 0.0672
Multiples of: 1

280 mA60 V3.5 OhmsN - Channel    500 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel 0.1 nC   
BSS138W H6327


Trans MOSFET N-CH 60V 0.28A Automotive 3-Pin SOT-323 T/R
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Infineon 81557
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AUD 0.0796
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0.28 A60 V3.5 OhmsN 600 mV- 55 C+ 150 C0.5 WSurface MountSOT - 323 - 3Tape And ReelSi1 Channel10 V1 nCEnhancement  
BSS119NH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
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Infineon 80901
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AUD 0.1345
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            Sipmos      
IRLL014NTRPBF


MOSFET N Trench 55V 2A 2V @ 250uA 140 mΩ @ 2A,10V SOT-223 RoHS
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Infineon 80025
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AUD 0.34
Multiples of: 2500

            Hexfet®      
BSS306NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon 79839
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AUD 0.1345
Multiples of: 1

2.3 A30 V57 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
BSC010N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon 79694
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AUD 1.4437
Multiples of: 1

            Optimos      
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