About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRF3205PBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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Infineon 191834
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AUD 0.497
Multiples of: 1

            Hexfet®      
BSS308PE H6327


Infineon Technologies MOSFET P-Ch -30V -2A SOT-23-3
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Infineon 162557
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AUD 0.1557
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2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 5 nCEnhancementAec - Q101 
BSZ099N06LS5ATMA1


Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
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Infineon 161585
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AUD 0.7325
Multiples of: 1

            Optimos      
2N7002DW H6327


Infineon Technologies MOSFET N-Ch 60V 300mA SOT-363-6
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Infineon 160615
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AUD 0.0849
Multiples of: 1

300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
Hot IRF540NPBF


MOSFET N Trench 100V 33A 4V @ 250uA 44 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon 154909
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AUD 0.3606
Multiples of: 1

            Hexfet®      
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 152017
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AUD 0.1625
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950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
BSC900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
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Infineon 145500
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AUD 1.35
Multiples of: 5000

            Optimos 3      
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 140881
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AUD 0.1315
Multiples of: 5

5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
BSS138N H6433


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-23-3
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Infineon 140838
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AUD 0.069
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230 mA60 V2.2 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.4 nCEnhancement  
BSS308PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
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Infineon 11640
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AUD 0.15
Multiples of: 3000

            Optimos P3      
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