About MOSFET

Diodes Incorporated MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 208185
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AUD 0.0849
Multiples of: 1

3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
DMP4047SSD-13


Diodes Incorporated MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss
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Diodes Incorporated 206125
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AUD 0.4594
Multiples of: 2500

- 6.5 A , - 6.5 A- 40 v , - 40 V45 mOhms , 45 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 v , 20 V10.6 nC , 16 nCEnhancement  
DMN63D8LDW-13


MOSFET 30V DUAL N-CH MOSFET
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Diodes Incorporated 203700
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AUD 0.0512
Multiples of: 10000

   N - Channel       ReelSi2 Channel     
DMP3099LQ-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 196079
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AUD 0.0708
Multiples of: 1

3.8 A30 V65 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11 nCEnhancementAec - Q101 
DMC2700UDM-7


MOSFET MOSFET BVDSS
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Diodes Incorporated 192312
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AUD 0.0814
Multiples of: 1

1.34 A , 1.14 A20 V700 mOhms , 1.3 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C1.12 WSmd/SmtSOT - 26 - 6Cut TapeSi2 Channel6 V736.6 pCEnhancement  
Hot 2N7002DW-7-F


60V 230mA 7.5O@5V,50mA 310mW 2 N-Channel SOT-363 MOSFETs ROHS
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Diodes Incorporated 192060
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AUD 0.0358
Multiples of: 3000

230 mA70 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C0.4 WSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
DMG6968U-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 180420
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AUD 0.0924
Multiples of: 3000

6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8.5 nCEnhancement  
DMN62D0LFD-7


N-Channel 60 V 310mA (Ta) 480mW (Ta) Surface Mount X1-DFN1212-3
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Diodes Incorporated 177510
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AUD 0.0692
Multiples of: 3000

310 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C480 mWSmd/SmtX1 - DFN1212 - 3Cut TapeSi1 Channel20 V500 pCEnhancement  
DMP10H400SK3-13


MOSFET 100V P-CH MOSFET
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Diodes Incorporated 174600
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AUD 0.3122
Multiples of: 2500

9 A100 V240 mOhmsP - Channel 1 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V17.5 nCEnhancement  
DMN63D8LV-7


MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
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Diodes Incorporated 171690
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AUD 0.0572
Multiples of: 3000

260 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C450 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V0.87 nCEnhancement  
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