Nce Power IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NCEP0160AG


DFN(5x6) IGBTs ROHS
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NCE Power 4407
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AUD 0.8225

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NCE10TD60BK


TO-252-2 IGBTs ROHS
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NCE Power 1573
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AUD 0.5389

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NCE30TD60B


TO-220 IGBTs ROHS
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NCE Power 970
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AUD 1.4082

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NCE07TD60BD


IGBTs TO-263 RoHS
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NCE Power 776
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AUD 0.6376

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NCE20TD60B


TO-220 IGBTs ROHS
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NCE Power 708
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AUD 1.5097

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NCE30TD60BD


IGBTs TO-263 RoHS
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NCE Power 703
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AUD 1.4981

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NCE07TD60BK


IGBTs TO-252 RoHS
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NCE Power 636
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AUD 0.5032

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NCE60TD60BT


TO-247-3 IGBTs ROHS
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NCE Power 551
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AUD 2.8599

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NCE15TD60BF


TO-220 IGBTs ROHS
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NCE Power 477
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between Tue. 08 Oct to Fri. 11 Oct
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AUD 1.1481

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NCE20TD60BF


TO-220F-3 IGBTs ROHS
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NCE Power 465
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between Tue. 08 Oct to Fri. 11 Oct
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AUD 1.2328

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