About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS 58
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AUD 45.8
Multiples of: 1

Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
IXYH8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS 56
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AUD 39.8667
Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IXGH28N120B


IGBT Transistors 28 Amps 1200V 3.50 Rds
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IXYS 53
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AUD 5.1645
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Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
IXA30RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS 50
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AUD 16.8889
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          Si    Ixa30rg1200dhglb
IXYK110N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS 49
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AUD 25.8269
Multiples of: 1

Single1200 V - 30 V , + 30 V310 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 8
IXGP20N120B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 44
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AUD 7.8
Multiples of: 1

         TubeSi    Ixgp20n120
IXGH10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 43
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AUD 12.1778
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
IXGP20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 41
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AUD 7.8
Multiples of: 1

Single1.2 kV2.3 V20 V40 A100 nA  TO - 220AB - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgp20n120
IXGH6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 40
Ships to you
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AUD 5.4564
Multiples of: 1

Single1.7 kV5.4 V+/- 20 V6 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
IXGP30N120B3


IGBT Transistors 30 Amps 1200V
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IXYS 37
Ships to you
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AUD 10.2889
Multiples of: 1

         TubeSi    Ixgp30n120
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