About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXSH20N60B2D1


IGBT Transistors 20 Amps 600V 2.5 Rds
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IXYS 2420
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AUD 7.5392
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh20n60
IXBH40N160


IGBT Transistors 1600V 33A
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IXYS 1542
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AUD 37.0397
Multiples of: 1

Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxbh40n160
IXBH16N170


Trans IGBT Chip N-CH 1.7KV 40A 3-Pin(3+Tab) TO-247AD
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IXYS 873
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AUD 16.3654
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Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
IXGT10N170


IGBT Transistors 20 Amps 1700 V 4 V Rds
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IXYS 785
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AUD 9.3825
Multiples of: 1

Single1.7 kV2.7 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt110 W- 55 C+ 150 CIxgt10n170
IXXH75N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
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IXYS 466
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AUD 8.7706
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         TubeSi    Ixxh75n60
IXGH72N60A3


IGBT Transistors 72 Amps 600V 1.35 Rds
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IXYS 366
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AUD 8.9536
Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh72n60
IXGH48N60B3D1


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 365
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AUD 12.2123
Multiples of: 1

Single600 V1.8 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYY8N90C3


IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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IXYS 339
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AUD 3.7908
Multiples of: 1

Single900 V2.5 V20 V20 A100 nA  TO - 252 - 3TubeSiSmd/Smt - 55 C+ 175 CPlanar
IXYK110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS 315
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AUD 27.4303
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 5
IXGH48N60C3D1


IGBT Transistors 30 Amps 600V
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IXYS 291
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AUD 13.3556
Multiples of: 1

Single600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh48n60
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