About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 173
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AUD 12.2338
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Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
IXYA20N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 170
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AUD 5.5556
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Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3 SiSmd/Smt200 W- 55 C+ 175 C 
IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS 169
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AUD 12.1154
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IXGH35N120B


IGBT Transistors 70 Amps 1200V 3.3 Rds
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IXYS 164
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AUD 24.2169
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Single1200 V +/- 20 V    TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxgh35n120
IXGH20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 156
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AUD 9.6889
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Single1.2 kV2.3 V+/- 20 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgh20n120
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS 156
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AUD 22.7104
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IXXN110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS 145
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AUD 42.331
Multiples of: 1

Single650 V2.1 V30 V215 A100 nA  SOT - 227TubeSiSmd/Smt750 W- 55 C+ 150 CIxxn110n65
IXA20I1200PZ-TUB


IGBT Transistors IGBT XPT-GENX3
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IXYS 143
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AUD 4.7825
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         Tube      
IXYP8N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
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IXYS 142
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AUD 6.1778
Multiples of: 1

Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
IXBH9N160G


IGBT Transistors 9 Amps 1600V
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IXYS 133
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AUD 7.8011
Multiples of: 1

Single1600 V4.9 V20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxbh9n160
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