C4D05120E V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 9.5 A F C Z -Rec Rectifier Q = 27 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) C4D05120E TO-252-2 C4D05120 Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages LED Lighting Power Supplies AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 19 T =25C C I Continuous Forward Current 9.5 A T =135C Fig. 3 F C 5 T =161C C 26 T =25C, t =10 ms, Half Sine pulse C P I Repetitive Peak Forward Surge Current A FRM 18 T =110C, t =10 ms, Half Sine pulse C P 46 T =25C, t =10 ms, Half Sine pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 36 T =110C, t =10 ms, Half Sine pulse C P 400 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 320 T =110C, t =10 m s, Pulse C P 100 T =25C C P Power Dissipation W Fig. 4 tot 43 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 10.6 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 6.5 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C4D05120E Rev. F, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.4 1.8 I = 5 A T =25C F J V Forward Voltage V Fig. 1 F 1.9 3 I = 5 A T =175C F J 20 150 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 40 300 V = 1200 V T =175C R J V = 800 V, I = 5A R F Q Total Capacitive Charge 27 nC di /dt = 200 A/s Fig. 5 C T = 25C J 390 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 27 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 20 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 8.0 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 1.5 C/W Fig. 9 JC Typical Performance 10 1000 9 T =-55C J 900 T = 25C J T = 75C J 8 T =125C J 800 T =175C J 7 700 6 600 5 500 T =-55C J 4 T = 25C 400 J T = 75C J T =125C J 3 300 T =175C J 2 200 1 100 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 500 1000 1500 2000 V (V) V (V)Voltage (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D05120E Rev. F, 01-2017 I (A) F Current (A) I (A) R