C3D16065D V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 22 A** F C Z -Rec Rectifier Q = 40 nC** c Features Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-247-3 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D16065D TO-247-3 C3D16065 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 23/46 T =25C C I Continuous Forward Current (Per Leg/Device) 11/22 A T =135C Fig. 3 F C 8/16 T =150C C Repetitive Peak Forward Surge Current 37.5/75 T =25C, t = 10 ms, Half Sine Wave C P I (Per Leg/Device) A FRM 25.5/51 T =110C, t = 10 ms, Half Sine Wave C P I Non-Repetitive Peak Forward Surge Current 71/142 T =25C, t = 10 ms, Half Sine Wave FSM C p A Fig. 8 (Per Leg/Device) 60/120 T =110C, t = 10 ms, Half Sine Wave C p Non-Repetitive Peak Forward Surge Current 650/1300 T =25C, t = 10 s, Pulse C P I A Fig. 8 FSM (Per Leg/Device) 530/1080 T =110C, t = 10 s, Pulse C P 100* T =25C C P Power Dissipation (Per Leg) W Fig. 4 tot 43.5* T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-600V R 25 T =25C, t =10 ms 2 2 2 C P i dt i t value (Per Leg) A s 18 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-247 Mounting Torque 6-32 Screw 8.8 lbf-in * ** Per Leg, Per Device 1 C3D16065D Rev. B, 7-2016Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 8 A T =25C F J V Forward Voltage V Fig. 1 F 2.1 2.4 I = 8 A T =175C F J 10 51 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 12 204 V = 650 V T =175C R J V = 400 V, I = 8A R F Q Total Capacitive Charge 20 nC di/dt = 500 A/s Fig. 5 C T = 25C J 395 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 37 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 32 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.0 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 1.5 * R Thermal Resistance from Junction to Case C/W Fig. 9 JC 0.75 ** * ** Per Leg, Per Device Typical Performance (Per Leg) 20 30 18 T = -55 C J 25 16 T = 25 C J 14 T = 75 C J 20 T = 175 C J 12 T = 125 C J T = 125 C J 10 15 T = 175 C J T = 75 C J 8 TT = = 25 25 CC 1100 J 6 T = -55 C J 4 5 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Foward Voltage, V (V) V (V) Reverse VVo (V)ltage, V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D16065D Rev. B, 7-2016 FFoowwaarrdd CCuurrrrenentt,, II (A) I (A) F F RReeveverrssee LLeaeakkaagge e CCuurrrrenentt,, II (mA) RR I ( mA) R