VS-6CWQ04FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A Base FEATURES common cathode Popular D-PAK outline 4 Center tap configuration Small foot print, surface mountable Low forward voltage drop 2 High frequency operation Common cathode D-PAK (TO-252AA) Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak of Package D-PAK (TO-252AA) 260 C I 2 x 3.5 A F(AV) DESCRIPTION V 40 V R The VS-6CWQ04FNPbF surface mount, center tap, V at I See Electrical table F F Schottky rectifier series has been designed for applications I 24 mA at 125 C RM requiring low forward drop and small foot prints on PC T max. 150 C J board. Typical applications are in disk drives, switching Diode variation Common cathode power supplies, converters, freewheeling diodes, battery E 8 mJ AS charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7 A F(AV) V 40 V RRM I t = 5 s sine 500 A FSM p V 3 Apk, T = 125 C (per leg) 0.49 V F J T Range - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-6CWQ04FNPbFUNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 3.5 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 7 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 500 non-repetitive surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 80 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 16 mH 8.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94248 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-6CWQ04FNPbF Schottky Rectifier, 2 x 3.5 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.53 T = 25 C J 6 A 0.67 Maximum forward voltage drop per leg (1) V V FM See fig. 1 3 A 0.49 T = 125 C J 6 A 0.62 Maximum reverse leakage T = 25 C 2 J (1) current per leg I V = Rated V mA RM R R T = 125 C 24 See fig. 2 J Threshold voltage V 0.34 V F(TO) T = T maximum J J Forward slope resistance r 37.33 m t Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 189 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range per leg 4.70 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 2.35 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 6CWQ04FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94248 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11