333 3 VCUT0714BHD1 www.vishay.com Vishay Semiconductors Bidirectional Asymmetrical (BiAs) Single Line ESD Protection Diode in DFN1006-2A FEATURES Ultra compact DFN1006-2A Available AEC-Q101 qualified available 1 2 Low package height 1-line ESD protection 20950 Working range -7 V up to +14 V or -14 V up to +7 V Low leakage current < 0.1 A Low load capacitance typical C = 8 pF D MARKING (example only) ESD immunity acc. IEC 61000-4-2 25 kV contact discharge XY 30 kV air discharge 21121 e3 - Sn Bar = pin 1 marking Tin plated exposed side wall of lead frame Y = type code (see table below) - Soldering can be checked by standard vision inspection X = date code - AOI = automated optical inspection - No X-ray necessary LINKS TO ADDITIONAL RESOURCES PATENT(S): www.vishay.com/patents Material categorization: for definitions of compliance 3D Models Models Application Notes please see www.vishay.com/doc 99912 ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE PART NUMBER AEC-Q101 RoHS-COMPLIANT + 10K PER 7 REEL ORDERING CODE TIN (EXAMPLE) QUALIFIED LEAD (Pb)-FREE TERMINATIONS (8 mm TAPE) PLATED GREEN MOQ = 10K VCUT0714BHD1 - G 3 -08 VCUT0714BHD1-G3-08 VCUT0714BHD1 H G 3 -08 VCUT0714BHD1HG3-08 PACKAGE DATA MOLDING COMPOUND PACKAGE PIN TYPE MOISTURE SOLDERING DEVICE NAME WEIGHT FLAMMABILITY NAME PLATING CODE SENSITIVITY LEVEL CONDITIONS RATING MSL level 1 Peak temperature VCUT0714BHD1 DFN1006-2A e3 :A 0.83 mg UL 94 V-0 (according J-STD-020) max. 260 C ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Pin 1 to pin 2, acc. IEC 61000-4-5, 8/20 s/single shot 3.6 A Peak pulse current I PPM Pin 2 to pin 1, acc. IEC 61000-4-5, 8/20 s/single shot 2 A Pin 1 to pin 2, acc. IEC 61000-4-5, 8/20 s/single shot 50 W Peak pulse power P PP Pin 2 to pin 1, acc. IEC 61000-4-5, 8/20 s/single shot 61 W Contact discharge acc. IEC 61000-4-2 10 pulses 25 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature for AEC-Q101 qualified devices T -55 to +150 C J Storage temperature T -65 to +150 C stg PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 1.4, 19-Nov-2021 Document Number: 86177 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D1 2 VCUT0714BHD1 www.vishay.com Vishay Semiconductors CUT THE SPIKES The VCUT0714BHD1 is a bidirectional but asymmetrical (BiAs) ESD protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0714BHD1 offers a high isolation (low leakage current, small capacitance) within the specified working range of -7 V to +14 V or -14 V and +7 V. Due to the short leads and small package size of the tiny DFN1006-2A package the line inductance is very low, so that fast transients like an ESD strike can be clamped with minimal over- or undershoots. - 7 V V + 14 V - 14 V V + 7 V RW RW Ground Ground 22286 ELECTRICAL CHARACTERISTICS (pin 2 to pin 1) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 14 V RWM Reverse voltage At I = 0.1 A V 14 - - V R R Reverse current At V = 14 V I -- 0.1 A RWM R Reverse breakdown voltage At I = 1 mA V 14.5 - - V R BR At I = 1 A V -- 27 V PP C Reverse clamping voltage At I = I = 2 A V -- 30 V PP PPM C At V = 0 V f = 1 MHz C -8 8.5 pF R D Capacitance At V = 7 V f = 1 MHz C -4- pF R D ELECTRICAL CHARACTERISTICS (pin 1 to pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 7 V RWM Reverse voltage At I = 0.1 A V 7- - V R R Reverse current At V = 7 V I -- 0.1 A RWM R Reverse breakdown voltage At I = 1 mA V 7.3 - - V R BR At I = 1 A V -- 13 V PP C Reverse clamping voltage At I = I = 3.6 A V -- 15 V PP PPM C At V = 0 V f = 1 MHz C -8 8.5 pF D Capacitance At V = 3.5 V f = 1 MHz C -6.4 - pF D Rev. 1.4, 19-Nov-2021 Document Number: 86177 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2 1