X-On Electronics has gained recognition as a prominent supplier of SQ2309ES-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2309ES-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ2309ES-T1_GE3 Vishay

SQ2309ES-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQ2309ES-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
Datasheet: SQ2309ES-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 0.5757 ( AUD 0.63 Inc GST) ea
Line Total: AUD 0.5757 ( AUD 0.63 Inc GST) 
Availability - 3663
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40719
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 5
Multiples : 1
5 : AUD 1.157
50 : AUD 1.04
100 : AUD 0.9646
500 : AUD 0.5993
1500 : AUD 0.565

3663
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.5757
10 : AUD 0.4845
30 : AUD 0.4465
100 : AUD 0.3965
500 : AUD 0.3174
1000 : AUD 0.3055

25111
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 32
Multiples : 1
32 : AUD 0.8394
100 : AUD 0.73
500 : AUD 0.641
1000 : AUD 0.5248
3000 : AUD 0.3994
9000 : AUD 0.3696
24000 : AUD 0.3594
45000 : AUD 0.3528

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Technology
Vgs - Gate-Source Voltage
Tradename
Series
Brand
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQ2309ES-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2309ES-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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siliconix.The SQ2309ES-T1_GE3 is a MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS manufactured by Vishay siliconix. It is a low-voltage enhancement-mode vertical D-MOS power transistor that uses advanced Trench process technology which provides excellent performance in both linear and switching applications. It features a low On-resistance, fast switching and a highly break-down voltage. The device is RoHS compliant and provides superior protection, stability and system reliability. Additionally, it offers very low thermal resistance and is resistant to thermal shock.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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