X-On Electronics has gained recognition as a prominent supplier of SIZ340DT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIZ340DT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIZ340DT-T1-GE3 Vishay

SIZ340DT-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIZ340DT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Half Bridge) 30V 30A, 40A 16.7W, 31W Surface Mount 8-Power33 (3x3)
Datasheet: SIZ340DT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 0.9386 ( AUD 1.03 Inc GST) ea
Line Total: AUD 0.9386 ( AUD 1.03 Inc GST) 
Availability - 3192
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5577
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.4918
10 : AUD 1.2606
25 : AUD 1.2404
100 : AUD 1.0358
250 : AUD 1.0268
500 : AUD 0.9044
1000 : AUD 0.7576
3000 : AUD 0.7142

6104
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.701
10 : AUD 1.326
100 : AUD 1.0387
500 : AUD 0.8814
1000 : AUD 0.6475
5000 : AUD 0.615

3192
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.9386
10 : AUD 0.7685
30 : AUD 0.6835
100 : AUD 0.5984
500 : AUD 0.5282
1000 : AUD 0.5016

5771
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.3305
10 : AUD 1.0828
100 : AUD 0.8793
500 : AUD 0.7661
1000 : AUD 0.6422
3000 : AUD 0.6122
6000 : AUD 0.6122
9000 : AUD 0.5892
24000 : AUD 0.5874

5577
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 17
Multiples : 1
17 : AUD 1.2606
25 : AUD 1.2404
100 : AUD 1.0358
250 : AUD 1.0268
500 : AUD 0.9044
1000 : AUD 0.7576
3000 : AUD 0.7142

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the SIZ340DT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIZ340DT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIZ340DT-T1-GE3 Mosfet Array 2 N-Channel (Half Bridge) 30V 30A, 40A 16.7W, 31W Surface Mount 8-Power33 (3x3) is a 30 V/30 A, 40 A/ 16.7 W, 31 W power device manufactured by Vishay. It consists of two N-channel Mosfets and two diodes in an integrated 8-Power33 (3x3) package. This part is ideal for use in DC-DC converters, motor control, and automotive applications. Additionally, this part features fast switching, low on-state resistance, and low gate charge for improved efficiency. This part can operate at a junction temperature up to 150°C with a high thermal stability and is lead (Pb) free and RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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