SiS413DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) 100% R and UIS Tested DS DS(on) D g g Material categorization: d 0.0094 at V = - 10 V - 18 GS For definitions of compliance please see - 30 35.4 nC d 0.0132 at V = - 4.5 V - 18 GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS Adaptor Switch S S 3.30 mm 3.30 mm Load Switch 1 S 2 Power Management S 3 Mobile Computing G G 4 D 8 D 7 D 6 D 5 Bottom View D Ordering Information: P-Channel MOSFET SiS413DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS d T = 25 C - 18 C d T = 70 C - 18 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 14.7 A a, b T = 70 C - 11.7 A A I - 70 Pulsed Drain Current (t = 300 s) DM d T = 25 C - 18 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 26 33 thJA C/W R Maximum Junction-to-Case Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop- per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 63262 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0632-Rev. A, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS413DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 23 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0076 0.0094 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0108 0.0132 GS D a g V = - 10 V, I = - 15 A 50 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4280 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 427 pF oss DS GS C Reverse Transfer Capacitance 382 rss V = - 15 V, V = - 10 V, I = - 10 A 73 110 DS GS D Q Total Gate Charge g 35.4 53 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 10.6 gs DS GS D Q Gate-Drain Charge 11.6 gd R Gate Resistance f = 1 MHz 0.4 1.6 3.2 g t Turn-On Delay Time 11 22 d(on) t V = - 15 V, R = 1.5 Rise Time 11 22 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 45 90 d(off) D GEN g t Fall Time 816 f ns t Turn-On Delay Time 55 100 d(on) t V = - 15 V, R = 1.5 Rise Time 82 150 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 40 80 d(off) D GEN g t Fall Time 13 26 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 18 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.74 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 18 36 ns rr Body Diode Reverse Recovery Charge Q 816 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63262 2 S13-0632-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000