New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.046 at V = 4.5 V New Thermally Enhanced PowerPAK 4.5 GS 20 3.5 nC SC-70 Package 0.063 at V = 2.5 V 4.5 GS - Small Footprint Area - Low On-Resistance Typical ESD Protection 560 V APPLICATIONS PowerPAK SC-70-6 Dual Load Switch for Portable Applications High Frequency DC/DC Converter D D 2 1 1 S 1 2 G 1 3 D 1 D 2 Marking Code G D G 2 1 1 D 2 6 G 2 C C X 5 2.05 mm Part code 2.05 mm S 2 X X X 4 Lot Traceability and Date code S 2 S 1 Ordering Information: SiA906EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS a T = 25 C C 4.5 a T = 70 C 4.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 4.5 b, c T = 70 C A A 4.1 I Pulsed Drain Current 15 DM a T = 25 C 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.6 A T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C A 1.9 b, c T = 70 C 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 12.5 16 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 69067 www.vishay.com S-83087-Rev. A, 29-Dec-08 1New Product SiA906EDJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 8 GSS DS GS V = 20 V, V = 0 V - 1 A DS GS I DSS Zero Gate Voltage Drain Current V = 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = 4.5 V 10 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 3.9 A 0.037 0.046 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.3 A 0.051 0.063 GS D a g V = 10 V, I = 3.9 A 14 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 350 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 63 pF oss DS GS C Reverse Transfer Capacitance 37 rss V = 10 V, V = 10 V, I = 5.1 A 7.5 12 DS GS D Q Total Gate Charge g 3.5 5.5 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 5.1 A 0.95 gs DS GS D Q Gate-Drain Charge 0.75 gd R Gate Resistance f = 1 MHz 3.5 g t Turn-on Delay Time 10 15 d(on) t Rise Time 12 20 r V = 10 V, R = 2.4 DD L t Turn-Off Delay Time 18 30 d(off) I 4.1 A, V = 4.5 V, R = 1 D GEN g Fall Time t 12 20 f ns t Turn-on Delay Time 510 d(on) Rise Time t 12 20 r V = 10 V, R = 2.4 DD L t Turn-Off Delay Time 15 25 d(off) I 4.1 A, V = 10 V, R = 1 D GEN g Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.5 S C A I Pulse Diode Forward Current 15 SM V I = 4.1 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 820 nC rr I = 4.1 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69067 2 S-83087-Rev. A, 29-Dec-08