New Product Si7174DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 75 0.007 at V = 10 V 47.5 nC GS 60 100 % R Tested COMPLIANT g 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch Synchronous Rectification S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: Si7174DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 75 DS V V Gate-Source Voltage 20 GS g T = 25 C C 60 g T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 21 b, c T = 70 C A 16.9 A I Pulsed Drain Current 80 DM g T = 25 C C 60 Continuous Source-Drain Diode Current I S b, c T = 25 C A 5.2 I Single Pulse Avalanche Current 40 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 80 AS T = 25 C 104 C T = 70 C 66.5 C P Maximum Power Dissipation W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 0.9 1.2 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7174DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 75 V DS GS D V Temperature Coefficient V /T 76 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 11 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 2.5 4.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 75 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 75 V, V = 0 V, T = 55 C 10 DS GS J a I V 10 V, V = 10 V 40 A On-State Drain Current D(on) DS GS a R V = 10 V, I = 10 A 0.0057 0.007 Drain-Source On-State Resistance DS(on) GS D a g V = 15 V, I = 10 A 34 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2770 iss C V = 40 V, V = 0 V, f = 1 MHz Output Capacitance 345 pF oss DS GS C Reverse Transfer Capacitance 140 rss Q Total Gate Charge 47.5 72 g Q V = 40 V, V = 10 V, I = 10 A Gate-Source Charge 13.8 nC gs DS GS D Gate-Drain Charge Q 14.4 gd R Gate Resistance f = 1 MHz 0.3 1.2 2.4 g Turn-On Delay Time t 16 30 d(on) t Rise Time V = 40 V, R = 10 11 22 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 28 50 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 21 40 d(on) t Rise Time V = 40 V, R = 10 11 22 r DD L I 10 A, V = 8 V, R = 6 t Turn-Off Delay Time D GEN g 38 70 d(off) t Fall Time 12 24 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A a I 80 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.75 1.2 V SD S Body Diode Reverse Recovery Time t 47 95 ns rr Q Body Diode Reverse Recovery Charge 103 210 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 36 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69975 2 S-80787-Rev. A, 14-Apr-08