Si7119DN Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available e 1.05 at V = - 10 V - 3.8 GS TrenchFET Power MOSFET - 200 10.6 nC e Low Thermal Resistance PowerPAK 1.10 at V = - 6.0V - 3.6 GS Package with Small Size and Low 1.07 mm Profile 100 % UIS and R Tested g PowerPAK 1212-8 APPLICATIONS Active Clamp in Intermediate DC/DC Power Supplies S 3.30 mm 3.30 mm S 1 S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7119DN-T1-E3 (Lead (Pb)-free) Si7119DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 200 DS V V Gate-Source Voltage 20 GS e T = 25 C - 3.8 C e T = 70 C - 3.0 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 1.2 A a, b T = 70 C - 0.95 A A I - 5 Pulsed Drain Current DM e T = 25 C - 5 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 3.0 A I Avalanche Current 5 AS L = 0.1 mH E Single-Pulse Avalanche Energy 1.25 mJ AS 52 T = 25 C C 33 T = 70 C C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. T = 25 C. C Document Number: 74251 www.vishay.com S-83052-Rev. B, 29-Dec-08 1Si7119DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.9 3.8 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 V DS GS D V Temperature Coefficient V /T - 250 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 200 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 200 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 10 V - 3 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 1 A 0.86 1.05 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 1 A 0.88 1.10 GS D a g V = - 15 V, I = - 1 A 4S Forward Transconductance fs DS D b Dynamic C Input Capacitance 666 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 36 pF oss DS GS C Reverse Transfer Capacitance 25 rss V = - 100 V, V = - 10 V, I = - 1 A 16.2 25 DS GS D Q Total Gate Charge g 10.6 16 nC Q V = - 100 V, V = - 6 V, I = - 1 A Gate-Source Charge 2.5 gs DS GS D Q Gate-Drain Charge 4.9 gd R Gate Resistance f = 1 MHz 5.3 8 g t Turn-On Delay Time 16 25 d(on) t V = - 100 V, R = 100 Rise Time 16 25 r DD L t I - 1 A, V = - 6 V, R = 1 Turn-Off DelayTime D GEN g 25 40 d(off) t Fall Time 16 25 f ns t Turn-On Delay Time 915 d(on) t V = - 100 V, R = 100 Rise Time 11 18 r DD L t I - 1 A, V = - 10 V, R = 1 Turn-Off DelayTime D GEN g 27 42 d(off) t Fall Time 12 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 5 S C A a I - 5 Pulse Diode Forward Current SM V I = - 1 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 66 90 ns rr Q Body Diode Reverse Recovery Charge 215 270 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 48 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74251 2 S-83052-Rev. B, 29-Dec-08