X-On Electronics has gained recognition as a prominent supplier of SI4447ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4447ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4447ADY-T1-GE3 Vishay

SI4447ADY-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI4447ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: 40V 7.2A 45mO@5A,10V 4.2W P Channel SO-8 MOSFETs ROHS
RFiD transceiver IC with selectable data rate from 768bps to 300kbps.
Datasheet: SI4447ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 0.8528 ( AUD 0.94 Inc GST) ea
Line Total: AUD 0.8528 ( AUD 0.94 Inc GST) 
Availability - 26693
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ: 1  Multiples: 1
Pack Size: 1

 SI4447ADY-T1-GE3 More Buying Options & Price Grid(s)
Availability Price Quantity
59661
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 100
Multiples : 1
100 : AUD 0.7533
500 : AUD 0.6058
1000 : AUD 0.5174

26693
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.8528
10 : AUD 0.7254
100 : AUD 0.5219
500 : AUD 0.4494
1000 : AUD 0.3928
2500 : AUD 0.3538
5000 : AUD 0.345
10000 : AUD 0.3344
25000 : AUD 0.3308

2152
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.12
10 : AUD 0.9326
25 : AUD 0.84
42 : AUD 0.6677
116 : AUD 0.6311

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4447ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4447ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4447ADY-T1-GE3 is a part of Vishay's Automotive, Discrete, and Logic portfolio, designed to support various precision applications. It is a low-noise P-channel enhancement-mode (E-MOSFET) transistor that has a maximum power dissipation of 1W. The device has an RDS(on) max of 0.7 Ohm, a VGS(max) of -30V, and an Id of -30A. It is housed in an SOT-223 case and is RoHS compliant. This device is ideal for use in power FET applications, battery management and power MOSFET switch applications where robustness and precision are required.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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