X-On Electronics has gained recognition as a prominent supplier of SI2315BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2315BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2315BDS-T1-E3 Vishay

SI2315BDS-T1-E3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2315BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 1.8V 3.2A 1.25W
Datasheet: SI2315BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
5: AUD 0.5059 ( AUD 0.56 Inc GST) ea
Line Total: AUD 2.5295 ( AUD 2.78 Inc GST) 
Availability - 40
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
20370
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.31
6000 : AUD 0.31
9000 : AUD 0.31
12000 : AUD 0.31
15000 : AUD 0.31

40
Ship by Fri. 04 Oct to Wed. 09 Oct
MOQ : 5
Multiples : 5
5 : AUD 0.5059
50 : AUD 0.4119
150 : AUD 0.3718
500 : AUD 0.3215
3000 : AUD 0.2991
6000 : AUD 0.2858

147165
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.9572
10 : AUD 0.7466
100 : AUD 0.5078
500 : AUD 0.4052
1000 : AUD 0.391
3000 : AUD 0.3627

3186
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.0123
10 : AUD 0.8874
25 : AUD 0.6763
52 : AUD 0.5449
142 : AUD 0.5148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2315BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2315BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2315BDS-T1-E3 is a dual N-channel enhancement mode Field-Effect Transistor (FET) constructed using advanced trench MOSFET technology. This FET is designed for high speed power switching applications. It features low on-state resistance and low gate-to-source capacitance. The device features a well-balanced performance and low RDS(ON). It has a maximum drain source voltage of 30V, with a maximum drain current of 3A, and a maximum power dissipation of 11.25W. The FET has a maximum thermal resistance of 2.5°C/W and an operating temperature range of -55°C to 125°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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